Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 22, Issue 11, 2001, Pages 504-506

  Tilak, Vinayak ^b   Green, Bruce ^b   Kaper, Val ^b   Kim, Hyungtak ^b   Prunty, Tom ^b   Smart, Joe ^b   Shealy, James ^b   Eastman, Lester ^a,b  

^a IEEE

^b Cornell University   (United States)

Author keywords

Microwave power; Passivation; Thermal effects in AlGaN

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; THERMAL EFFECTS;

ALUMINUM GALLIUM NITRIDE; DC KNEE VOLTAGE; MICROWAVE POWER DENSITY; POWER ADDED EFFICIENCY; RADIO FREQUENCY KNEE VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035506622     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.962644     Document Type: Article

References (8)

1. Very-high power density AlGaN/GaN HEMTs
2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
3. Large signal dispersion of AlGaN/GaN heterostructure field effect transistors
4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
5. Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor
6. The effect of a MBE grown AlN surface layer on the DC and RF characteristics of GaN heterojunction field effect transistors
7. Effect of passivation on HEMT device performance
8. Characteristics, integration and optimization of integrated circuits on AlGaN/GaN HEMTs