Ku-band MMIC power amplifiers developed using MSAG MESFET technology

Microwave Journal

Volumn 49, Issue 2, 2006, Pages 56-82

  Bahl, Inder J ^a  

^a M/A COM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

KU-BAND MMIC POWER AMPLIFIERS; MSAG MESFET TECHNOLOGY;

ELECTRIC CURRENTS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS;

MESFET DEVICES;

EID: 33644927002     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (30)

1. M. Cardullo, et al., "High Efficiency X-Ku-band MMIC Power Amplifiers," 1996 IEEE MTT-S International Microwave Symposium Digent, Vol. 1, pp. 145-148.
2. M. Salib, et al., "A Robust 3 W High Efficiency 8 to 14 GHz GaAs/AlGaAs Heterojunction Bipolar Transistor Power Amplifier," 1998 IEEE MTT-S International Microwave Symposium Digest, Vol. 2, pp. 581-584.
3. J. Komiak, W. Kong and K. Nichols, "High Efficiency Wideband 6 to 18 GHz PHEMT Power Amplifier MMIC," 2002 IEEE MTT-S International Microwave Symposium Digest, Vol. 2, pp. 905-907.
4. T. Shimura, et 3., "A High Power Density, 6 W MMIC for Ku-/K-band Applications," 2003 IEEE MTT-S International Microwave Symposium Digest, Vol. 2, pp. 851-854.
5. Q. Zhang and S.A. Brown, "Fully Monolithic 8 W Ku-band High Power Amplifier," 2004 IEEE MTT-S International Microwave Symposium Digest, Vol. 2, pp. 1161-1164.
6. J.G. Kim, et al., "A 2 W Balanced Power Amplifier MMIC for Ku-band Satellite Communications," Microwave and Optical Technology Letters, Vol. 42, August 2004, pp. 342-344.
7. A.E. Geissberger, et al., "Refractory Self-aligned Gate Technology for GaAs Microwave FETs and MMICs," Electronic Letters, Vol. 23, September 1987, pp. 1073-1075.
8. A.E. Geissberger, I.J. Bahl, E.L. Griffin and R.A. Sadler, "A New Refractory Self-aligned Gate Technology for GaAs Microwave Power FETs and MMICs," IEEE Transactions on Electron Devices, Vol. 35, No. 5, May 1988, pp. 615-622.
9. I.J. Bahl, et al., "Class-B Power MMIC Amplifiers with 70 Percent Power-added Efficiency," IEEE Transactions on Microwave Theory and Techniques, Vol. 37, No. 9, September 1989, pp. 1315-1320.
10. I. J. Bahl, et al., "C-band 10 W MMIC Class-A Amplifier Manufactured Using the Refractory SAG Process," IEEE Transactions on Microwave Theory and Techniques, Vol. 37, No. 12, December 1989, pp. 2154-2158.
11. I. J. Bahl, et al., "Multifunction SAG Process for High Yield Low Cost GaAs Microwave Integrated Circuits," IEEE Transactions on Microwave Theory and Techniques, Vol. 38, No. 9, September 1990, pp. 1175-1182.
12. W.L. Pribble and E.L. Griffin, "An Ion-implanted 13 W C-band M MIC with 60 Percent Peak Power-added Efficiency," 1996 IEEE Microwave and Millimeter Wave Monolithic Circuits Symposium Digest, pp. 25-28.
13. E.L. Griffin, "X-band GaAs MMIC Size Reduction and Integration," 2001 IEEE MTT-S International Microwave Symposium Digest, Vol. 2, pp. 709-712.
14. I. J. Bahl, "Design of a Generic 2.5 W, 60 Percent Bandwidth, C-band MMIC Amplifier," Microwave Journal, Vol. 45, No. 9, August 2002, pp. 54-70.
15. M. Ashman and I.J. Bahl, "High Performance Wideband MSAG Gain Block/Driver Amplifier MMICs Using MLP Technology," Microwave Journal, Vol. 47, No. 12, December 2004, pp. 74-88.
16. I. J. Bahl, "MESFET Process Yields MMIC Ka-band PAs," Microwaves and RF, Vol. 44, No. 5, May 2005, pp. 96-112.
17. H.F. Cooke, "Precise Technique Finds FET Thermal Resistance," Microwaves and RF, August 1986, pp. 85-87;
18. correction of this paper in Microwaves & RF, February 1987, p. 13.
19. A. Materka and T. Kacprzak, "Computer Calculation of Large-signal GaAs FET Amplifier Characteristics," IEEE Transactions on Microwave Theory and Techniques, Vol. 33, No. 2, February 1985, pp. 129-135.
20. I.J. Bahl, et al., "Low Loss Multilayer Microstrip Line for Monolithic Microwave Integrated Circuits Applications," International Journal of RF and Microwave Computer-aided Engineering, Vol. 8, November 1998, pp. 441-154.
21. I.J. Bahl, "High Current Capacity Multilayer Inductors for RF and Microwave Circuits," International Journal of RF and Microwave Computer-aided Engineering, Vol. 10, March 2000, pp. 139-146.
22. I.J. Bahl, "High Q and Low Loss Matching Network Elements for RF and Microwave Circuits," IEEE Microwave Magazine, Vol. 1, September 2000, pp. 64-73.
23. I.J. Bahl, Lumped Elements for RF and Microwave Circuits, Artech House Inc., Norwood, MA, 2003.
24. KELDIST, M/A-COM's Internal Software.
25. I.J. Bahl, "Average Power Handling Capability of Multilayer Microstrip Lines," International Journal of RF and Microwave Computer-aided Engineering, Vol. 11, November 2001, pp. 385-395.
26. S.C. Cripps, RF Power Amplifiers for Wireless Communications, Artech House Inc., Norwood, MA, 1999.
27. E.L. Griffin, "Application of Loadline Simulation to Microwave High Power Amplifiers," IEEE Microwave Magazine, Vol. 1, June 2000, pp. 58-66.
28. K. Chang, I.J. Bahl and V. Nair, RF and Microwave Circuit and Component Design for Wireless Systems, John Wiley & Sons Inc., Hoboken, NJ, 2002, Chapter 11.
29. I.J. Bahl and P. Bhartia, Microwave Solid State Circuit Design, Second Edition, John Wiley & Sons Inc., Hoboken, NJ, 2003, Chapter 10.
30. I.J. Bahl, "Low Loss Matching (LLM) Design Technique for Power Amplifiers," IEEE Microwave Magazine, Vol. 5, December 2004, pp. 66-71.