W-band InP-based HEMT MMIC power amplifiers using finite-ground CPW design

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1998, Pages 37-40

  Yu, M ^a   Matloubian, M ^a   Petre, P ^a   Hamilton, L ^a   Bowen, R ^a   Lui, M ^a   Sun, H C ^a   Ngo, C ^a   Janke, P ^a   Baker, D ^a   Robertson, R ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT TESTING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; WAVEGUIDES;

FINITE-GROUND COPLANAR WAVEGUIDES (FGCPW);

POWER AMPLIFIERS;

EID: 0032314850     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)