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GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 237-240

Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs

(10) Van Heijningen, M a Van Vliet, F E a Quay, R b Van Raay, F b Kiefer, R b Muller S b Krausse, D b Seelmann Eggebert, M b Mikulla, M b Schlechtweg, M b

a TNO (Netherlands)

b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; ITERATIVE METHODS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS;

CPW TECHNOLOGY; HIGH POWER AMPLIFIERS; OUTPUT POWER; SMALL SIGNAL GAIN;

POWER AMPLIFIERS;

EID: 33847280583 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (24)

References (7)

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2
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- T. Inoue, Y. Ando, H. Miyamoto, Ta Nakayama, Y. Okamoto, K. Hataya and M. Kuzuhara, 30GHz-band 5.8 W High-Power AlGaN/GaN Heterojunction-FET, MTTS 2004, Fort Worth, pp. 1649-1651.
- T. Inoue, Y. Ando, H. Miyamoto, Ta Nakayama, Y. Okamoto, K. Hataya and M. Kuzuhara, "30GHz-band 5.8 W High-Power AlGaN/GaN Heterojunction-FET", MTTS 2004, Fort Worth, pp. 1649-1651.

3
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- M. Micovic, Ara Kurdoghlian, H.P. Moyer, P. Hashimoto, A. Schmitz, I. Milosavljevic, P. J. Willadsen, W.-S. Wong, J. Duvall, M. Hu, M. J. Delaney, D. H. Chow, Ka-band MMIC Power Amplifier in GaN HFET Technology, MTT-S 2004, Fort Worth, pp. 1653-1656.
- M. Micovic, Ara Kurdoghlian, H.P. Moyer, P. Hashimoto, A. Schmitz, I. Milosavljevic, P. J. Willadsen, W.-S. Wong, J. Duvall, M. Hu, M. J. Delaney, D. H. Chow, "Ka-band MMIC Power Amplifier in GaN HFET Technology", MTT-S 2004, Fort Worth, pp. 1653-1656.

4
- 0842288219
- 3.5-Watt AlGaN/GaN HEMTs and Amplifiers at 35 GHz
- December
- Y.-F. Wu, M. Moore, A. Saxler, P. Smith, P.M. Chavarkar, P. Parikh, "3.5-Watt AlGaN/GaN HEMTs and Amplifiers at 35 GHz", 2003 IEEE Int. Electron Device Meeting.Dig., pp. 579-581, December 2003.
- (2003) 2003 IEEE Int. Electron Device Meeting.Dig , pp. 579-581
- Wu, Y.-F.¹ Moore, M.² Saxler, A.³ Smith, P.⁴ Chavarkar, P.M.⁵ Parikh, P.⁶

5
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- F. van Raay, R. Quay, R. Kiefer, M. Schlechtweg G. Weimann, Large signal modeling of AlGaN/GaN HEMTs with Psat > 4 W/mm at 30 GHz suitable for broadband power applications, MTT-S 2003, Philadelphia pp. 451-454.
- F. van Raay, R. Quay, R. Kiefer, M. Schlechtweg G. Weimann, "Large signal modeling of AlGaN/GaN HEMTs with Psat > 4 W/mm at 30 GHz suitable for broadband power applications", MTT-S 2003, Philadelphia pp. 451-454.

6
- 0036928693
- AlGaN/GaN HEMTs on SiC operating at 40 GHz
- R. Quay, R. Kiefer, F. van Raay, H. Massler, S. Ramberger, S. Müller, M. Dammann, M. Mikulla, M. Schlechtweg, G. Weimann, "AlGaN/GaN HEMTs on SiC operating at 40 GHz", 2002 IEEE Int. Electron Device Meeting.Dig., pp. 673-676.
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- Quay, R.¹ Kiefer, R.² van Raay, F.³ Massler, H.⁴ Ramberger, S.⁵ Müller, S.⁶ Dammann, M.⁷ Mikulla, M.⁸ Schlechtweg, M.⁹ Weimann, G.¹⁰

7
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- ISBN 90-386-1920-0, July
- A.P. de Hek, "Design, Realisation and Test of GaAs-based Monolithic Integrated X-band High-Power Amplifiers", ISBN 90-386-1920-0, July 2002.
- (2002) Design, Realisation and Test of GaAs-based Monolithic Integrated X-band High-Power Amplifiers
- de Hek, A.P.¹

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