Field-plated GaN HEMTs and amplifiers

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2005, Pages 170-172

  Wu, Y F ^a   Saxler, A ^b   Moore, M ^a   Wisleder, T ^a   Mishra, U K ^a   Parikh, P ^a  

^a Cree Santa Barbara Technology Center   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN HEMT; GATE-CONNECTED FIELD PLATES; TRAPPING EFFECT;

ELECTRIC BREAKDOWN; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM COMPOUNDS;

POWER AMPLIFIERS;

EID: 30944459492     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara, "10-W/mm AlGaN-GaN HFET with a field modulation plate", IEEE Electron Device Lett., Vol.24, pp. 289-291, May 2003.
2. A. Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller, and U. K. Mishra, "12W/mm Power Density AlGaN/GaN HEMTs on sapphire substrate", Electronics Letters.
3. Y.-F. Wu, A. Saxler, M. Moore, R.P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U.K. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by Field Plate Optimization", IEEE Electron Device Letters, Vol. 25, No. 3, pp. 117-119, March 2004.
4. Y.-F. Wu, M. Moore, A. Saxler, R.P. Smith, P.M. Chavarkar, and P. Parikh, "3.5-Watt AlGaN HEMTs and Amplifiers at 35 GHz", IEDM Technical Digest, pp. 579-581, Washington, DC, Dec. 8-10, 2003.