A 20-mW G-band monolithic driver amplifier using 0.07-μm InP HEMT

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 806-809

  Huang, P ^a   Lai, R ^a   Grundbacher, R ^a   Gorospe, B ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

HEMT; InP; Millimeter wave amplifiers; MMIC amplifier

Indexed keywords

CASCADE CONNECTIONS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

MILLIMETER WAVE AMPLIFIERS; MMIC AMPLIFIERS; SUBSTRATE THICKNESS; WR-S HOUSING;

MICROWAVE AMPLIFIERS;

EID: 33847793010     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249795     Document Type: Conference Paper

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