2 and 4 Watt Ka-band GaAs PHEMT power amplifier MMICs

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 843-846

  Colomb, Francois Y ^a   Platzker, Aryeh ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL PROCESSING;

POWER DENSITY;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0041592485     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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2. Triquint TGA4501-EPU Data Sheet.
3. A. Bessemoulin, J. Dishong, G. Clark, D. White, P. Quentin, H. Thomas, D. Geiger, "1-Watt broad Ka-band ultra small high power amplifier MMICs using 0.25-μm GaAs PHEMTs," 2002 GaAs IC Symp. Dig., pp. 40-43.
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8. K. Alavi, D. Shaw, A. Platzker, B. Rizzi, S. Ogut, and R. Puente, "A very high performance, high yield, and high throughput millimeter wave power pHEMT process technology," 2001 GaAs Mantech Dig., pp. 105-107.
9. A. Platzker, W. Struble, and K. T. Hetzler, "Instabilities diagnosis and the role of K in microwave circuits," 1993 IEEE MTT-S Dig., pp. 1185-1188
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