25 GHz InGaAs/InAlAs-InP HBT power MMIC with 48% power added efficiency

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 409-412

  Kobayashi, K W ^a   Yang, Li ^a   Gutierrez Aitken, A ^a   Kaneshiro, E ^a   Yamada, F M ^a   Yen, H C ^a   Block, T R ^a   Oki, A K ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC POWER SUPPLIES TO APPARATUS; FREQUENCIES; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

INDIUM ALUMINUM ARSENIDE; OVAL EMITTER ARRAY DEVICE; POWER ADDED EFFICIENCY;

POWER AMPLIFIERS;

EID: 0033332340     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)