Composite-channel InP HEMT for W-band power amplifiers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 305-306

  Chen, Y C ^a   Chin, P ^a   Ingram, D ^a   Lai, R ^a   Grundbacher, R ^a   Barsky, M ^a   Block, T ^a   Wojtowicz, M ^a   Tran, L ^a   Medvedev, V ^a   Yen, H C ^a   Streit, D C ^a   Brown, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); MICROWAVE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

COMPOSITE CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032682884     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (0)