An indium phosphide X-band class-E power MMIC with 40% bandwidth

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2005, Pages 220-223

  Watson, P ^a   Quach, T ^a   Axtel, H ^a   Gutierrez Aitken, A ^b   Kaneshiro, E ^b   Lee, W ^b   Mattamana, A ^a   Oki, A ^b   Orlando, P ^a   Patel, V ^a   Sawdai, D ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Broadband power amplifier; Class E; InP DHBT; Power added efficiency (PAE)

Indexed keywords

CLASS-E AMPLIFIERS; FREQUENCY BAND; X-BAND POWER AMPLIFIERS;

BANDWIDTH; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER AMPLIFIERS; SEMICONDUCTING INDIUM PHOSPHIDE;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 30944468578     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2005.1531819     Document Type: Conference Paper

References (8)

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