AlGaN/GaN K a-band 5-W MMIC amplifier

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 12, 2006, Pages 4456-4463

  Darwish, Ali Mohamed ^a,b   Boutros, K ^a,c   Luo, B ^c   Huebschman, Benjamin D ^a,b   Viveiros, E ^a,b   Hung, H Alfred ^a,b  

^a IEEE   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

GaN high electron mobility transistor (HEMT); High power; K a band power amplifier (PA); Millimeter wave monolithic microwave integrated circuit (MMIC)

Indexed keywords

MILLIMETER WAVE ANTENNAS; OUTPUT POWER; POWER ADDED EFFICIENCY; POWER DENSITY;

ALUMINUM GALLIUM NITRIDE; CONTINUOUS TIME SYSTEMS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

POWER AMPLIFIERS;

EID: 33847743889     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.883599     Document Type: Article

References (16)

1. Y.-F. Wu, M. Moore, A. Saxler, P. Smith, P. M. Chavarkar, and P. Parikh, "3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz," in Proc. IEEE Int. Electron Devices Meeting, 2003, pp. 23.5.1-23.5.2.
2. Y.-F. Wu, M. Moore, A. Saxler, T. Wisleder, U. K. Mishra, and P. Parikh, "8-watt GaN HEMTs at millimeter-wave frequencies," in Proc. IEEE Int. Electron Devices Meeting, 2005, pp. 583-585.
3. R. Quay, A. Tessmann, R. Kiefer, R. Weber, F. van Raay, M. Kuri, M. Riessle, H. Massler, S. Muller, M. Schlechtweg, and G. Weimann, "AlGaN/GaN HEMTs on SiC: Towards power operation at V-band," in Proc. IEEE Int. Electron Devices Meeting, 2003, pp. 23.2.1-23.2.2.
4. T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "High-power AlGaN/GaN HEMTs for K a-band applications," IEEE Electron Device Lett., vol. 26, no. 11, pp. 781-783, Nov. 2005.
5. T. Palacios, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, "High power AlGaN/GaN HEMTs for millimeter-wave applications," in Government Microcircuit Applicat. Critical Technol. Conf., San Diego, CA, 2006, Paper 11.3.
6. K. Boutros, M. Regan, P. Rowell, D. Gotthold, R. Birkhahn, and B. Brar, "High performance GaN HEMTs at 40 GHz with power density of 2.8 W/mm," in Proc. IEEE Int. Electron Devices Meeting, 2003, pp. 12.5.1-12.5.2.
7. J. Moon, S. Wu, D. Wong, I. Milosavljevic, P. Hashimoto, M. Hu, M. Antcliffe, and M. Micovic, "Deep submicron gate-recessed and field-plated AlGaN/GaN HFETs for millimeter-wave applications," in Proc. Mater. Res. Soc. Fall Meeting, Dec. 2004, vol. E6-1, pp. 119-125.
8. M. Micovic, A. Kurdoghlian, H. P. Moyer, P. Hashimoto, A. Schmitz, I. Milosavljevic, P. J. Willadesn, W.-S. Wong, J. Duvall, M. Hu, M. J. Delaney, and D. H. Chow, "K a-band MMIC power amplifier in GaN HFET technology," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2004, pp. 1653-1656.
9. M. Micovic, A. Kurdoghlian, H. P. Moyer, P. Hashimoto, A. Schmitz, I. Milosavljevic, P. J. Willadesn, W.-S. Wong, J. Duvall, M. Hu, M. Wetzel, and D. H. Chow, "GaN MMIC technology for microwave and millimeter-wave applications," in IEEE Compound Semiconduct. Integr. Circuits Symp., Oct. 2005, Session J.
10. B. M. Green, S. Lee, K. Chu, K. J. Webb, and L. F. Eastman, "High efficiency monolithic gallium nitride distributed amplifier," IEEE Microw. Guided Wave Lett., vol. 10, no. 7, pp. 270-272, Jul. 2000.
11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, p. 333.
12. A. M. Darwish, B. Huebschman, R. Del Rosario, E. Viveiros, and H. A. Hung, "Temperature behavior of AlGaN/GaN on SiC HEMTs," in IEEE Compound Semiconduct. Conf., Palm Springs, CA, 2005, Paper H.3.
13. H. W. Bode, Network Analysis and Feedback Amplifier Design. New York: Van Nostrand, 1945.
14. A. M. Darwish, K. Boulros, B. Luo, B. Huebschman, E. Viveiros, and H. A. Hung, "4-wall K a-band AlGaN/GaN power amplifier MMIC," in IEEE MTT-S Int. Microw. Symp. Dig., San Francisco, CA, 2006, Paper WE3B-07.
15. A. M. Darwish, A. Bayba, and H. A. Hung, "Thermal resistance calculation of AlGaN/GaN devices," IEEE Trans. Microw. Theory Tech., vol. 52, no. 11, pp. 2611-2620, Nov. 2004.
16. _, "Accurate determination of thermal resistance of FETs," IEEE Trans. Microw. Theory Tech, vol. 53, no. 1, pp. 306-313, Jan. 2005.