A compact 6.5-W PHEMT MMIC power amplifier for Ku-band applications

IEEE Microwave and Wireless Components Letters

Volumn 17, Issue 2, 2007, Pages 154-156

  Lin, Che Hung ^b   Liu, Hong Zhi ^b   Chu, Chen Kuo ^b   Huang, Hou Kuei ^b   Liu, Chi Chuan ^c   Chang, Ching Hsueh ^c   Wu, Chang Luen ^c   Chang, Chian Sern ^c   Wang, Yeong Her ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c Transcom Inc   (Taiwan)

Author keywords

Ku band; Monolithic microwave integrated circuit (MMIC); Power amplifier (PA); Pseudormorphic high electron mobility transistor (PHEMT)

Indexed keywords

DC BIAS CONDITION; KU-BAND APPLICATIONS; PSEUDORMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT); SIGNAL GAIN;

ELECTRIC IMPEDANCE; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

POWER AMPLIFIERS;

EID: 33847734411     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2006.890347     Document Type: Article

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