Single chip 1-W InP HEMT V-band module

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1999, Pages 149-152

  Chen, Y C ^a   Ingram, D L ^a   Yamauchi, D ^a   Brunner, B ^a   Kraus, J ^a   Barsky, M ^a   Grundbacher, R ^a   Cha, S K ^a   Lai, R ^a   Block, T ^a   Wojtowicz, M ^a   Chin, T P ^a   Allen, B ^a   Yen, H C ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE;

POWER ADDED EFFICIENCY (PAE); WILKINSON COMBINERS;

POWER AMPLIFIERS;

EID: 0033330053     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)