0.5 Watt-40% PAE InP double heterojunction bipolar transistor K-band MMIC power amplifier

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 250-253

  Kobayashi, K W ^a   Oki, A K ^a   Yang, Li W ^a   Gutierrez Aitken, A ^a   Chin, P ^a   Sawdai, Don ^a   Okamura, W ^a   Lester, J ^a   Kaneshiro, E ^a   Grossman, P C ^a   Sato, K ^a   Block, T R ^a   Yen, H C ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POWER ADDED EFFICIENCY (PAE);

HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE;

POWER AMPLIFIERS;

EID: 0033727090     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)

1. Robinder S. Virk, Mary Y. Chen, Chanh Nguyen, Takyiu Liu, Mehran Matloubian, and David B. Rensch, "A High-Performance AlInAs/lnGaAs/InP DHBT K-Band Power Cell," IEEE Microwave and Guided Wave Letters., vol. 7, no. 10, pp. 323-325, Oct., 1997.
2. Li Yang, et al, 1999 IEEE GaAs IC Symp. Dig., Moterery, CA, Oct., pp. 73-76.
3. K.W. Kobayashi, et al, 1999 IEEE Intl. Electron Device Meeting Proceedings, Washington, D.C., Nov.
4. K.W. Kobayashi, Li-W Yang, A. Gutierrez-Aitken, P. Chin, D. Sawdai, E. Kaneshiro, P.C. Grossman, T.R. Block H.C. Yen, A.K. Oki and D.C. Streit, "0.5 Watt-70% PAEi InP Double Heterojunction Bipolar Transistor (DHBT) Prematched MMIC at K-band," submitted to IEEE Microwave and Guided Wave Letters, 2000.