AlGaN/GaN HFET amplifier performance and limitations

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 1811-1814

  Trew, R J ^a  

^a Virginia Polytechnic Institute and State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON SCATTERING; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; CURRENT SLUMP; HETEROJUNCTION FIELD EFFECT TRANSISTORS;

AMPLIFIERS (ELECTRONIC);

EID: 0036068528     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Wide bandgap semiconductor transistors for microwave power amplifiers
2. Very-high power density AlGaN/GaN HEMT's
3. Influence of barrier thickness of the high-power performance of AlGaN/GaN HEMT's
4. The effects of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
5. Influence of surface processing and passivation on carrier concentrations and transport properties in AlGaN/GaN heterostructures
6. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFET's