Very high efficiency V-band power InP HEMT MMICs

IEEE Electron Device Letters

Volumn 21, Issue 11, 2000, Pages 521-523

  Kong, Wendell M T ^a   Wang, Sujane C ^b   Chao, Pane Chane ^a   Tu, Der Wei ^a   Hwang, Kuichul ^a   Tang, O S A ^a   Liu, Shih Ming ^c   Ho, Pin ^b   Nichols, Kirby ^a   Heaton, John ^a  

^a LOCKHEED MARTIN   (United States)

^b Global Communication Semiconductors   (United States)

^c WIN Semiconductors ^*  (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GATES (TRANSISTOR); INDUCTANCE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

INDIUM ALUMINUM ARSENIDE; MONOLITHIC POWER AMPLIFIER; POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034318883     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.877196     Document Type: Article

References (6)

1. M. Smith, "Status of InP HEMT technology for microwave receiver applications," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2328-2333, 1996.
2. T. Suemitsu et al, "30 nm gate InAlAs/InGaAs HEMT's lattice matched to InP substrates," IEDM Tech. Dig., pp. 223-226, 1998.
3. max," IEEE Microwave Guided Wave Lett., vol. 5, pp. 230-232, 1995.
4. R. Grundbacher et al., "Pseudomorphic InP HEMT's with dry etched source vias having 190 mW output power and 40% PAE at V-band," IEEE Electron Device Lett., vol 20, pp. 517-519, Oct. 1999.
5. R. Piotrowicz et al., "Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure," IEEE Microwave Guided Wave Lett., vol. 8, pp. 10-12, Jan. 1998.
6. O. S. A. Tang, "Design of high-power high-efficiency 60-GHz MMICs using an improved nonlinear PHEMT model," IEEE J. Solid-State Circuits, vol. 32, pp. 1326-1333, Sept. 1997.