Ultra-efficient X-Band and linear-efficient Ka-Band power amplifiers using indium phosphide double heterojunction bipolar transistors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 501-504

  Quach, T ^a   Okamura, W ^b   Gutierrez Aitken, A ^b   Jenkins, T ^a   Kaneshiro, E ^b   Kehias, L ^a   Oki, A ^b   Sawdai, D ^b   Watson, P ^a   Welch, R ^a   Worley, R ^a   Yen, H C ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDPASS AMPLIFIERS; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; LINEAR INTEGRATED CIRCUITS; MICROSTRIP LINES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE;

LINEAR-EFFICIENT CIRCUITS;

POWER AMPLIFIERS;

EID: 0034840918     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2001.929189     Document Type: Article

References (7)

1. InP heterojunction bipolar transistor (HBT) technology for power applications
2. Microwave power performance of InP-based Double Heterojunction Bipolar Transistors for C- and X-Band Applications
3. The transmission line high efficiency class-E amplifier
4. Ultra-High efficiency operation based on an alternative class-E mode
5. Amplifier linearization for the local multipoint distribution system application
6. K-Band 76%PAE InP double heterojunction bipolar power transistors and a 23 GHz compact linear power amplifier MMIC
7. Class E - A New class of high-efficiency tuned single - Ended switching power amplifiers