Extremely high P1dB MMIC amplifiers for Ka-band applications

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 115-117

  Lai, R ^a   Grundbacher, R ^a   Barsky, M ^a   Oki, A ^a   Siddiqui, M ^a   Pitman, B ^a   Katz, R ^a   Tran, P ^a   Callejo, L ^a   Streit, D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN CONTROL; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE;

POWER DENSITY;

POWER AMPLIFIERS;

EID: 0035175517     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A 6 watt Ka-band MMIC power module using MMIC power amplifier
2. High power 0.15 μm V-band pseudomorphic InGaAs/AlGaAs/GaAs HEMT
3. 0.15 um InGaAs/AlGaAs/GaAs HEMT production process for high performance V-band power MMICs