A Monolithic 24 GHz, 20 dBm, 14% PAE SiGe HBT power amplifier

Proceedings of the 36th European Microwave Conference, EuMC 2006

Volumn , Issue , 2006, Pages 419-422

  Comeau, Jonathan P ^a   Andrews, Joel M ^a   Cressler, John D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

PA; Power amplifier; SiGe HBT; Silicon germanium

Indexed keywords

BIAS CURRENTS; CASCADE CONNECTIONS; ELECTRIC LOSSES; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS;

BIASED CIRCITS; COMPRESSION POINTS; RETURN LOSS; SWING CAPABILITIES;

POWER AMPLIFIERS;

EID: 41649093968     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2006.281363     Document Type: Conference Paper

References (16)

1. J.D. Cressler and G. Niu, Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, Boston, 2003.
2. J.D. Cressler (Editor), Silicon Heterostructure Handbook, CRC Press, Boca Raton, FL, 2006.
3. L. Larson, "Silicon Technology Tradeoffs for Radio-Frequency/Mixed- Signal "Systems-on-a-Chip"", Trans. on Elect. Dev., vol. 50, pp. 683-699, 2003.
4. S. Subbanna, et al., "Using silicon-germanium mainstream BICMOS technology for X-band and LMDS (25-30 GHz) microwave applications," IEEE MTT-S Symp. Dig., pp. 401-404, 2002.
5. A. Ghazinour, et al., "A fully-monolithic SiGe-BiCMOS transceiver chip for 24 GHz applications," IEEE BCTM, pp. 181-184, 2003.
6. A. Hajimiri, et al., "Integrated phased array systems in silicon." Proc. of the IEEE, vol. 93, no. 9, pp. 1637-1655, Sept. 2005.
7. Z. Ma, et al., "An 18-GHz 300-mW SiGe Power HBT," Electron Device Letters, vol. 26, no. 6, pp. 381-383, June 2005.
8. A. Komijani, and A. Hajimiri, "A 24 GHz, +14dBm fully-integrated power amplifier in 0.18μm CMOS," IEEE Proc. of the Custom Inteq. Circ. Conf., pp. 561-564, Oct. 2004.
9. N. Kinayman, et al., "Design of 24 GHz SiGe HBT balanced power amplifier for System-on-a-Chip Ultra-Wideband applications," IEEE RFIC, pp. 91-93, June 2005.
10. M. Racanelli and P. Kempf. "SiGe BiCMOS technology for communication products," IEEE Proc. of the Custom. Integ. Circ. Conf. pp. 331-334, Sept. 2003.
11. http://www.jazzsemi.com/process-technologies/sige.shtml
12. J. Andrews and J.D. Cressler, "On the optimal use of multiple breakdown voltage devices in SiGe HBT power amplifiers," IEEE Topical Workshop on PA for Wireless Comm., P-8, Jan. 2006.
13. S. Chartier, et al., "24 and 36 GHz SiGe HBT Power Amplifiers," IEEE 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 251-254, September 2004.
14. T.S.D. Cheung, and J.R Long, "A 21-26-GHz SiGe bipolar power amplifier MMIC" IEEE JSSC, pp. 2583-2597, Dec. 2005.
15. R. Negra, et al., "Switched-mode High-efficiency Ka-band MMIC power amplifier- in GaAs pHEMT technology," IEEE Int. Symp. on EDMO pp. 15-18, Nov. 2004.
16. W. Okamura, et al., "K-band 76% PAE InP double heterojunction bipolar power transistors and a 23 GHz compact linear power amplifier MMIC." GaAs IC Symp., pp. 219-222, Nov. 2000.