High performance thin film electronics based on inorganic nanostructures and composites

Nano Today

Volumn 8, Issue 5, 2013, Pages 514-530

  Wang, Chunlan ^a   Cheng, Rui ^b   Liao, Lei ^a   Duan, Xiangfeng ^c  

^a WUHAN UNIVERSITY   (China)

^b Engineering IV   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Carbon nanotubes; Composite thin films; Graphene nanostructures; Layered materials; Semiconductor nanowires; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; CARBON NANOTUBES; FLEXIBLE DISPLAYS; FLEXIBLE ELECTRONICS; MATERIALS SCIENCE; NANOWIRES; RADIO FREQUENCY IDENTIFICATION (RFID); SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; THIN FILMS; TRANSISTORS;

COMPOSITE THIN FILMS; FLEXIBLE PLASTIC SUBSTRATES; HIGH-TEMPERATURE DEPOSITION; INORGANIC NANOSTRUCTURES; LARGE-AREA ELECTRONICS; LAYERED MATERIAL; SEMICONDUCTOR NANOWIRE; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

CARBON NANOTUBE; DISULFIDE; GRAPHENE; METAL OXIDE; MOLYBDENUM; NANOCOMPOSITE; NANOMATERIAL; NANOMESH; NANORIBBON; NANOWIRE; PLASTIC; QUANTUM DOT; SILICON DIOXIDE; SINGLE WALLED NANOTUBE; ZIRCONIUM OXIDE;

CHEMICAL ANALYSIS; CHEMICAL COMPOSITION; COMPOSITE MATERIAL; CONDUCTANCE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FILM; HIGH TEMPERATURE; INTEGRATED CIRCUIT; LOW TEMPERATURE; MOLECULAR ELECTRONICS; NANOFABRICATION; OSCILLATOR; OXYGEN AFFINITY; RADIOFREQUENCY IDENTIFICATION; REVIEW; ROOM TEMPERATURE; SEMICONDUCTOR; THEORETICAL STUDY;

EID: 84886949242     PISSN: 17480132     EISSN: 1878044X     Source Type: Journal    
DOI: 10.1016/j.nantod.2013.08.001     Document Type: Review

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