-
1
-
-
0035397490
-
Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays
-
Jul
-
Y. He, R. Hattori, and J. Kanicki, "Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays," IEEE Trans. Electron Devices, vol. 48, no. 7, pp. 1322-1325, Jul. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.7
, pp. 1322-1325
-
-
He, Y.1
Hattori, R.2
Kanicki, J.3
-
2
-
-
0042884284
-
Amorphous silicon TFT-based active-matrix organic polymer LEDs
-
Jul
-
J. H. Kim, Y. Hong, and J. Kanicki, "Amorphous silicon TFT-based active-matrix organic polymer LEDs," IEEE Electron Device Lett., vol. 24, no. 7, pp. 451-453, Jul. 2003.
-
(2003)
IEEE Electron Device Lett
, vol.24
, Issue.7
, pp. 451-453
-
-
Kim, J.H.1
Hong, Y.2
Kanicki, J.3
-
3
-
-
13844254246
-
Threshold voltage and mobility mismatch compensated analogue buffer for driver-integrated poly-Si TFT LCDs
-
Jan
-
C. Yoo, D. J. Kim, and K. L. Lee, "Threshold voltage and mobility mismatch compensated analogue buffer for driver-integrated poly-Si TFT LCDs," Electron. Lett., vol. 41, no. 2, pp. 65-66, Jan. 2005.
-
(2005)
Electron. Lett
, vol.41
, Issue.2
, pp. 65-66
-
-
Yoo, C.1
Kim, D.J.2
Lee, K.L.3
-
4
-
-
17644378108
-
Low temperature polycrystalline silicon TFT fingerprint sensor with integrated comparator circuit
-
H. Hara, M. Sakurai, M. Miyasaka, S. W. B. Tam, S. Inoue, and T. Shimoda, "Low temperature polycrystalline silicon TFT fingerprint sensor with integrated comparator circuit," in Proc. 30th ESSCIRC 2004, pp. 403-406.
-
(2004)
Proc. 30th ESSCIRC
, pp. 403-406
-
-
Hara, H.1
Sakurai, M.2
Miyasaka, M.3
Tam, S.W.B.4
Inoue, S.5
Shimoda, T.6
-
5
-
-
0037708293
-
High mobility thin film transistors with transparent ZnO channels
-
Apr
-
J. Nishii, F. M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo, T. Fulmmura, F. Matsukura, Y. Ohno, H. Koinuma, H. Ohno, and M. Kawasaki, "High mobility thin film transistors with transparent ZnO channels," Jpn. J. Appl. Phys., vol. 42, no. 4A, pp. L347-L349, Apr. 2003.
-
(2003)
Jpn. J. Appl. Phys
, vol.42
, Issue.4 A
-
-
Nishii, J.1
Hossain, F.M.2
Takagi, S.3
Aita, T.4
Saikusa, K.5
Ohmaki, Y.6
Ohkubo, I.7
Kishimoto, S.8
Ohtomo, A.9
Fulmmura, T.10
Matsukura, F.11
Ohno, Y.12
Koinuma, H.13
Ohno, H.14
Kawasaki, M.15
-
6
-
-
0000939615
-
1-xO as a II-VI widegap semiconductor alloy
-
May
-
1-xO as a II-VI widegap semiconductor alloy," Appl. Phys. Lett., vol. 72, no. 19, pp. 2466-2468, May 1998.
-
(1998)
Appl. Phys. Lett
, vol.72
, Issue.19
, pp. 2466-2468
-
-
Ohtomo, A.1
Kawasaki, M.2
Koida, T.3
Masubuchi, K.4
Koinuma, H.5
Sakurai, Y.6
Yoshida, Y.7
Yasuda, T.8
Segawa, Y.9
-
7
-
-
0141955079
-
Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films
-
Sep
-
P. Bhattacharya, R. R. Das, and R. S. Katiyar, "Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films," Appl. Phys. Lett., vol. 83, no. 10, pp. 2010-2012, Sep. 2003.
-
(2003)
Appl. Phys. Lett
, vol.83
, Issue.10
, pp. 2010-2012
-
-
Bhattacharya, P.1
Das, R.R.2
Katiyar, R.S.3
-
8
-
-
0037323096
-
Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
-
Feb
-
S. Masuda, K. Kitamura, Y. Okumura, and S. Miyatake, "Transparent thin film transistors using ZnO as an active channel layer and their electrical properties," J. Appl. Phys., vol. 93, no. 3, pp. 1624-1630, Feb. 2003.
-
(2003)
J. Appl. Phys
, vol.93
, Issue.3
, pp. 1624-1630
-
-
Masuda, S.1
Kitamura, K.2
Okumura, Y.3
Miyatake, S.4
-
9
-
-
2342540970
-
Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel
-
Apr
-
Y. Kwon, Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, Z. V. Park, and S. Li, "Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel," Appl. Phys. Lett., vol. 84, no. 14, pp. 2685-2687, Apr. 2004.
-
(2004)
Appl. Phys. Lett
, vol.84
, Issue.14
, pp. 2685-2687
-
-
Kwon, Y.1
Li, Y.2
Heo, Y.W.3
Jones, M.4
Holloway, P.H.5
Norton, D.P.6
Park, Z.V.7
Li, S.8
-
10
-
-
0037415828
-
ZnO-based transparent thin-film transistors
-
Feb
-
R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors," Appl. Phys. Lett., vol. 82, no. 5, pp. 733-735, Feb. 2003.
-
(2003)
Appl. Phys. Lett
, vol.82
, Issue.5
, pp. 733-735
-
-
Hoffman, R.L.1
Norris, B.J.2
Wager, J.F.3
-
11
-
-
9744248669
-
Room temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
-
Nov
-
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
-
(2004)
Nature
, vol.432
, Issue.7016
, pp. 488-492
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
12
-
-
2442449460
-
1-xO thin film alloys
-
May
-
1-xO thin film alloys," J. Phys.: Condens. Matter, vol. 16, no. 17, pp. 2973-2980, May 2004.
-
(2004)
J. Phys.: Condens. Matter
, vol.16
, Issue.17
, pp. 2973-2980
-
-
Chen, N.1
Wu, H.2
Qiu, D.3
Xu, T.4
Chen, J.5
Shen, W.6
-
13
-
-
9544252166
-
Application of cubic MgZnO thin films in metal-insulator-silicon structure
-
Jun
-
J. Liang, H. Z. Wu, and Y. F. Lao, "Application of cubic MgZnO thin films in metal-insulator-silicon structure," Chin. Phys. Lett., vol. 21, no. 6, pp. 1135-1138, Jun. 2004.
-
(2004)
Chin. Phys. Lett
, vol.21
, Issue.6
, pp. 1135-1138
-
-
Liang, J.1
Wu, H.Z.2
Lao, Y.F.3
-
14
-
-
0034229758
-
Low-temperature epitaxy of ZnO films on Si(001) and silica by reactive e-beam evaporation
-
Jul
-
H. Z. Wu, K. M. He, D. J. Qiu, and D. M. Huang, "Low-temperature epitaxy of ZnO films on Si(001) and silica by reactive e-beam evaporation," J. Cryst. Growth, vol. 217, pp. 131-137, Jul. 2000.
-
(2000)
J. Cryst. Growth
, vol.217
, pp. 131-137
-
-
Wu, H.Z.1
He, K.M.2
Qiu, D.J.3
Huang, D.M.4
-
15
-
-
79957929680
-
1-xO alloy films
-
Mar
-
1-xO alloy films," Appl. Phys. Lett., vol. 80, no. 9, pp. 1529-1531, Mar. 2002.
-
(2002)
Appl. Phys. Lett
, vol.80
, Issue.9
, pp. 1529-1531
-
-
Choopun, S.1
Vispute, R.D.2
Wang, W.3
Shama, R.P.4
Venkatesa, T.5
Sen, H.6
-
16
-
-
19944431384
-
-
1-xO thin-film alloys, J. Appl. Phys., 97, no. 2, pp. 23 515.1-23 515.4, Jan. 2005.
-
1-xO thin-film alloys," J. Appl. Phys., vol. 97, no. 2, pp. 23 515.1-23 515.4, Jan. 2005.
-
-
-
-
17
-
-
24144475498
-
Annealing effect on electrical properties of high-k MgZnO film on silicon
-
May
-
J. Liang, H. Z. Wu, N. B. Chen, and T. N. Xu, "Annealing effect on electrical properties of high-k MgZnO film on silicon," Semicond. Sci. Technol., vol. 20, no. 5, pp. L15-L19, May 2005.
-
(2005)
Semicond. Sci. Technol
, vol.20
, Issue.5
-
-
Liang, J.1
Wu, H.Z.2
Chen, N.B.3
Xu, T.N.4
-
18
-
-
33646433759
-
-
W. Z. Xu, Z. Z. Ye, Y. J. Zeng, and L. P. Zhu, ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition, Appl. Phys. Lett., 88, no. 17, pp. 173 506.1-173 506.3, Apr. 2006.
-
W. Z. Xu, Z. Z. Ye, Y. J. Zeng, and L. P. Zhu, "ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition," Appl. Phys. Lett., vol. 88, no. 17, pp. 173 506.1-173 506.3, Apr. 2006.
-
-
-
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