Diameter-dependent electron mobility of lnas nanowires

Nano Letters

Volumn 9, Issue 1, 2009, Pages 360-365

  Ford, Alexandra C ^a,b,c   Johnny C , Ho ^a,b,c   Chueh, Yu Lun ^a,b,c   Tseng, Yu Chih ^a,b,c   Fan, Zhiyong ^a,b,c   Guo, Jing ^a,b,c   Bokor, Jeffrey ^a,b,c   Javey, Ali ^a,b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRIC WIRE; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; SURFACE ROUGHNESS; SURFACES; THERMAL EFFECTS; TRANSPORT PROPERTIES;

ACCURATE MEASUREMENTS; C-V CHARACTERIZATIONS; DIRECT ASSESSMENTS; ELECTRONIC MATERIALS; FIELD-EFFECT MOBILITIES; FIXED CHARGES; GATE OXIDE CAPACITANCES; LOW TEMPERATURES; MOBILITY DEGRADATIONS; NANO-SCALE; SURFACE FUNCTIONALIZATION; SURFACE ROUGHNESS SCATTERINGS; TEMPERATURE DEPENDENTS; THERMALLY ACTIVATED; TRANSPORT DATUM; TRAP STATE;

NANOWIRES;

INDIUM; INDIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

ARSENICALS; COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; INDIUM; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE;

EID: 61649109093     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803154m     Document Type: Article

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