Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

Nanotechnology

Volumn 23, Issue 6, 2012, Pages

  Hung Nguyen, V ^a,b   Mazzamuto, F ^a   Saint Martin, J ^a   Bournel, A ^a   Dollfus, P ^a  

^a CNRS   (France)

^b INSTITUTE OF PHYSICS   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP OPENINGS; ELECTRONIC DEVICE; N-DOPED; NANOMESH; NEGATIVE DIFFERENTIAL CONDUCTANCE; NEW DESIGN; P-N JUNCTION; PEAK TO VALLEY CURRENT RATIO; QUANTUM SIMULATIONS; ROOM TEMPERATURE; TIGHT BINDING MODEL; TRANSITION LENGTH; TRANSITION REGIONS; TRANSPORT CHARACTERISTICS;

COMPUTER SIMULATION; ELECTRON DEVICES; QUANTUM CHEMISTRY;

GRAPHENE;

EID: 84855949231     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/6/065201     Document Type: Article

References (37)

1. Castro Neto A H, Guinea F, Peres N M R, Novoselov K S and Geim A K 2009 Rev. Mod. Phys. 81 109
2. Lin Y-M, Dimitrakopoulos C, Jenkins K A, Farmer D B, Chiu H-Y, Grill A and Avouris Ph 2010 Science 327 662
3. Schwierz F 2010 Nature Nanotechnol. 5 487
4. Reddy D, Register L F, Carpenter G D and Banerjee S K 2011 J. Phys. D: Appl. Phys. 44 313001
5. Geim A K and Novoselov K S 2007 Nature Mater. 6 183
6. Mizuta H and Tanoue T 1995 The Physics and Applications of Resonant Tunneling Diodes (Cambridge: Cambridge University Press)
7. Nam Do V, Hung Nguyen V, Dollfus P and Bournel A 2008 J. Appl. Phys. 104 063708
8. Chau Nguyen H and Lien Nguyen V 2009 J. Phys.: Condens. Matter 21 045305
9. Hung Nguyen V, Bournel A, Lien Nguyen V and Dollfus P 2009 Appl. Phys. Lett. 95 232115
10. Fiori G 2011 IEEE Electron Device Lett. 32 1334
11. Wang Z F, Li Q, Shi Q W, Wang X, Yang J, Hou J G and Chen J 2008 Appl. Phys. Lett. 92 133114
12. Liang G, Khalid S B and Lam K-T 2010 J. Phys. D: Appl. Phys. 43 215101
13. Nam Do V and Dollfus P 2010 J. Appl. Phys. 107 063705
14. Hung Nguyen V, Bournel A and Dollfus P 2011 J. Appl. Phys. 109 093706
15. Hung Nguyen V, Mazzamuto F, Saint-Martin J, Bournel A and Dollfus P 2011 Appl. Phys. Lett. 99 042105
16. Zhou S Y, Gweon G-H, Fedorov A V, First P N, de Heer W A, Lee D-H, Guinea F, Castro Neto A H and Lanzara A 2007 Nature Mater. 6 770
17. Han M Y, zyilmaz B, Zhang Y and Kim P 2007 Phys. Rev. Lett. 98 206805
18. Bai J, Zhong X, Jiang S, Huang Y and Duan X 2010 Nature Nanotechnol. 5 190
19. Kim M, Safron N S, Han E, Arnold M S and Gopalan P 2010 Nano Lett. 10 1125
20. Sinitskii A and Tour J M 2010 J. Am. Chem. Soc. 132 14730
21. Liang X, Jung Y-S, Wu S, Ismach A, Olynick D L, Cabrini S and Bokor J 2010 Nano Lett. 10 2454
22. Hung Nguyen V, Nam Do V, Bournel A, Lien Nguyen V and Dollfus P 2009 J. Appl. Phys. 106 053710
23. Reich S, Maultzsch J, Thomsen C and Ordejn P 2002 Phys. Rev. B 66 035412
24. Anantram M P, Lundstrom M S and Nikonov D E 2008 Proc. IEEE 96 1511
25. Lopez Sancho M P, Lopez Sancho J M and Rubio J 1984 J. Phys. F: Met. Phys. 14 1205
26. Li T C and Lu S P 2008 Phys. Rev. B 77 085408
27. Huard B, Sulpizio J A, Stander N, Todd K, Yang B and Goldhaber-Gordon D 2007 Phys. Rev. Lett. 98 236803
28. Zhang L M and Fogler M M 2008 Phys. Rev. Lett. 100 116804
29. Low T, Hong S, Appenzeller J, Datta S and Lundstrom M S 2009 IEEE Trans. Electron Devices 56 1292
30. Farmer D B, Lin Y-M, Afzali-Ardakani A and Avouris P 2009 Appl. Phys. Lett. 94 213106
31. Brenner K and Murali R 2010 Appl. Phys. Lett. 96 063104
32. Pedersen T G, Flindt C, Pedersen J, Mortensen N A, Jauho A-P and Pedersen K 2008 Phys. Rev. Lett. 100 136804
33. Petersen R and Pedersen T G 2009 Phys. Rev. B 80 113404
34. Liu W, Wang Z F, Shi Q W, Yang J and Liu F 2009 Phys. Rev. B 80 233405
35. Esaki L 1958 Phys. Rev. 109 603
36. Oehme M, Sarlija M, Hahnel D, Kaschel M, Werner J, Kasper E and Schulze J 2010 IEEE Trans. Electron Devices 57 2857
37. Katsnelson M I, Novoselov K S and Geim A K 2006 Nature Phys. 2 620