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Journal of Materials Chemistry

Volumn 22, Issue 34, 2012, Pages 17415-17420

Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

(3) Avis, Christophe a Kim, Youn Goo a Jang, Jin a

a NONE (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM OXIDES; HIGH-K DIELECTRIC; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; TIN OXIDES;

AMORPHOUS STRUCTURES; FIELD-EFFECT MOBILITIES; GATE VOLTAGE SWING; OXIDE THIN-FILM TRANSISTORS; PROCESS TEMPERATURE; SOLUTION-PROCESSED; STOICHIOMETRIC COMPOSITIONS; ZINC-TIN-OXIDE (ZTO);

THIN FILM TRANSISTORS;

EID: 84865046974 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm33054g Document Type: Article

Times cited : (98)

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