High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays

ACS Nano

Volumn 3, Issue 11, 2009, Pages 3383-3390

  Chen, Po Chiang ^a   Shen, Guozhen ^a   Chen, Haitian ^a   Ha, Young Geun ^b   Wu, Chao ^a   Sukcharoenchoke, Saowalak ^a   Fu, Yue ^a   Liu, Jun ^b   Facchetti, Antonio ^b   Marks, Tobin J ^b   Thompson, Mark E ^a,c   Zhou, Chongwu ^a  

^a University of Southern California ^*  (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

^c UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

AMOLED display; Metal oxide nanowire synthesis; Self assembled gate dielectric (SAND); Transparent electronics

Indexed keywords

AM-OLED; METAL OXIDE NANOWIRE SYNTHESIS; SELF-ASSEMBLED; SELF-ASSEMBLED GATE DIELECTRIC (SAND); TRANSPARENT ELECTRONICS;

ABLATION; ARSENIC; DOPING (ADDITIVES); ELECTRONIC EQUIPMENT; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; INDIUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING ORGANIC COMPOUNDS; SYNTHESIS (CHEMICAL); THIN FILM TRANSISTORS; TIN; TITANIUM COMPOUNDS; TRANSPARENCY;

NANOWIRES;

EID: 73249133735     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn900704c     Document Type: Article

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