Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors

Nano Letters

Volumn 6, Issue 7, 2006, Pages 1468-1473

  Li, Yat ^a   Xiang, Jie ^a   Qian, Fang ^a   Gradečak, Silvija ^a   Wu, Yue ^a   Yan, Hao ^a   Blom, Douglas A ^c   Lieber, Charles M ^a,b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN NANOWIRES; METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); NANOELECTRONICS; NANOWIRE HETEROSTRUCTURES;

ALUMINUM NITRIDE; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

ALUMINUM DERIVATIVE; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRON; MACROMOLECULE; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM COMPOUNDS; ELECTRONS; GALLIUM; MACROMOLECULAR SUBSTANCES; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; TRANSISTORS;

EID: 33746893026     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl060849z     Document Type: Article

References (44)

1. (a) Hu, J.; Odom, T.; Lieber, C. M. Acc. Chem. Res. 1999, 32, 435.
2. (b) Lieber, C. M. MRS Bull. 2003, 28, 486.
3. (a) Samuelson, L. Mater. Today 2003, 6, 22.
4. (b) Wang, Z. L. Mater. Today 2004, 7, 26.
5. (c) Yang, P. MRS Bull. 2005, 30, 85.
6. (d) Wang, Z. L. J. Mater. Chem. 2005, 15, 1021.
7. Huang, Y.; Duan, X.; Cui, Y.; Lieber, C. M. Nano Lett. 2002, 2, 101.
8. Zheng, G.; Lu, W.; Jin, S.; Lieber, C. M. Adv. Mater. 2004, 16, 1890.
9. Greytak, A. B.; Lauhon, L. J.; Gudiksen, M. S.; Lieber, C. M. Appl. Phys. Lett. 2004, 84, 4176.
10. Cui, Y.; Lieber, C. M. Science 2001, 291, 851.
11. Huang, Y.; Duan, X.; Cui, Y.; Lauhon, L. J.; Kim, K. H.; Lieber, C. M. Science 2001, 294, 1313.
12. (a) Zhong, Z.; Wang, D.; Cui, Y.; Bockrath, M. W.; Lieber, C. M. Science 2003, 302, 1377.
13. (b) Yang, C.; Zhong, Z.; Lieber, C. M. Science 2005, 310, 1304.
14. Qian, F.; Li, Y.; Gradečak, S.; Wang, D.; Barrelet, C. J.; Lieber, C. M. Nano Lett. 2004, 4, 1975.
15. Qian, F.; Gradečak, S.; Li, Y.; Wen, C. Y.; Lieber, C. M. Nano Lett. 2005, 5, 2287.
16. (a) Erwin, S. C.; Zu, L.; Haftel, M. L; Efros, A. L.; Kennedy, T. A.; Norris, D. J. Nature 2005, 436, 91.
17. (b) Shim, M.; Guyot-Sionnest, P. Nature 2000, 407, 981.
18. Shur, M. Physics of Semiconductor Devices; Prentice Hall: New Jersey, 1990.
19. Lauhon, L. J.; Gudikson, M. S.; Wang, D.; Lieber, C. M. Nature 2002, 420, 57.
20. Lu, W.; Xiang, J.; Timko, B. P.; Wu, Y.; Lieber, C. M. Proc. Natl. Acad. Sci. USA 2005, 102, 10046.
21. Xiang, J.; Lu, W.; Hu, Y. J.; Wu, Y.; Yan, H.; Lieber, C. M. Nature 2006, 441, 489.
22. Bernardini, F.; Fiorentini, V.; Vanderbilt, D. Phys. Rev. B 1997, 56, R10024.
23. Shen, L.; Heikman, S.; Moran, B.; Coffie, R.; Zhang, N.-Q.; Buttari, D.; Smorchkova, I. P.; Keller, S.; DenBaars, S. P.; Mishra, U. K. IEEE Electron Device Lett. 2001, 22, 457.
24. Sanchez, A. M.; Pacheco, F. J.; Molina, S. I.; Stemmer, J.; Aderhold, J.; Graul, J. J. Electron Mater. 2001, 30, L17.
25. (a) Choi, H. J.; Johnson, J. C.; He, R.; Lee, S. K.; Kim, F.; Pauzauskie, P.; Goldberger, J.; Saykally, R. J.; Yang, P. J. Phys. Chem. B 2003, 107, 8721.
26. (b) Su, J.; Gherasimova, M.; Cui, G.; Tsukamoto, H.; Han, J.; Onuma, T.; Kurimoto, M.; Chichibu, S. F.; Broadbridge, C.; He, Y.; Nurmikko, A. V. Appl. Phys. Lett. 2005, 87, 183108.
27. 3 substrate in a MOCVD reactor (Thomas Swan Scientific Equipment Ltd.) using trimethylgallium, trimethylaluminium, and ammonia as Ga, Al, and N sources, respectively. We deposited 0.01 M nickel nitrate solution as the nickel nanocluster precursor. GaN cores were grown at 775°C and sequentially deposited with AlN and AlGaN shells in hydrogen at 1040°C.
28. Manfra, M. J.; Pfriffer, L. N.; West, K. W.; Stormer, H. L.; BaldwíDJn, K. W.; Hsu, J. W. P.; Lang, D. V. Appl. Phys. Lett. 2000, 77, 2888.
29. Cross-section TEM samples of GaN/AlN/AlGaN nanowires were prepared by ultramicrotomy. Nanowires were transferred to Thermanox plastic coverslips and embedded into an Epon-Araldite epoxy resin. Embedded samples were cut perpendicular to the nanowire axis into 70- 150-nm-thick slices using a diamond ultramicrotome knife and then transferred onto Cu/lacey-carbon TEM grids. STEM images were collected in a JEOL 22200FS aberration-corrected STEM operated with a 200 kV electron beam and a 100-mrad ADF inner angle. EDX elemental maps were recorded using a VG HB603 STEM.
30. Gradečak, S.; Qian, F.; Li, Y.; Park, H. G.; Lieber, C. M. Appl. Phys. Lett. 2005, 87, 173111.
31. Pennycook, S. J.; Boatner, L. A. Nature 1988, 336, 565.
32. 4 (100/200 nm) dielectric layer. Source-drain contacts were deposited by thermal evaporation of Ti/Al/Ti/Au (20/80/20/30 nm) and annealed in nitrogen at 800°C for 30 s to achieve ohmic contact.
33. Yu, H. Y.; Kang, B. H.; Park, C. W.; Pi, U. H.; Lee. C. J.; Choi, S. Y. Appl. Phys. A 2005, 81, 245.
34. Martel, R.; Schmidt, T.; Shea, H. R.; Hertel, T.; Avouris, Ph. Appl. Phys. Lett. 1998, 73, 2447.
35. 4 (100/200 nm) dielectric layers in a global back-gate configuration yields a value of ca. 80 aF/μm.
36. Skierbiszewski, C.; Dybko, K.; Knap, W.; Siekacz, M.; Krupczyñski, W.; Nowak, G.; Boækowski, M.; Lusakowski, J.; Wasilewski, Z. R.; Maude, M.; Suski, T.; Porowski, S. Appl. Phys. Lett. 2005, 86, 102106.
37. Henriksen, E. A.; Syed, S.; Ahmadian, Y.; Manfra, M. J.; Baldwin, K. W.; Sergent, A. M.; Molnar, R. J.; Stormer, H. L. Appl. Phys. Lett. 2005, 86, 252108.
38. Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A. M.; Chow, P. P.; Osinsky, A.; La Roche, J. R.; Ren, F.; Pearton, S. J. Appl. Phys. Lett. 2004, 84, 1495.
39. Manfra, M. J.; Baldwin, K. W.; Sergent, A. M.; West, K. W.; Molnar, R. J.; Caissie, J. Appl. Phys. Lett. 2004, 85, 5394.
40. The spontaneous and piezoelectric polarization effect for (0001) and {-110-1} facets are not the same, and this may lead to different carrier densities on the three facets of our nanowire heterostructure. It will be interesting to investigate this point in the future.
41. 2 deposition using tetrakis(dimethylamino) zirconium as the precursor were carried out at 110°C with each cycle consisting of a 1 s water vapor pulse, a 5 s nitrogen purge, a 3 s precursor, and a 5 s nitrogen purge. Top-gate electrodes were defined by e-beam lithography and deposited with metal Ni/Au (100/50 nm) using thermal evaporation. The top-gate metal slightly overlaps with the source and drain.
42. Okita, H.; Kaifu, K.; Mita, J.; Yamada, T.; Sano, Y.; Ishikawa, H.; Egawa, T.; Jimbo, T. Phys. Status Solidi A 2003, 200, 187.
43. Wernersson, L.; Bryllert, T.; Lind, E.; Samuelson, L. Proc. IEEE Int. Electron Devices Meet. 2005, Washington, D.C.
44. Wang, H. T.; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J. Appl. Phys. Lett. 2005, 87, 172105.