High-frequency self-aligned graphene transistors with transferred gate stacks

Proceedings of the National Academy of Sciences of the United States of America

Volumn 109, Issue 29, 2012, Pages 11588-11592

  Cheng, Rui ^a   Bai, Jingwei ^a   Liao, Lei ^a   Zhou, Hailong ^a   Chen, Yu ^a   Liu, Lixin ^a   Lin, Yung Chen ^a   Jiang, Shan ^a   Huang, Yu ^a   Duan, Xiangfeng ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Cut off frequency; Transfer gate

Indexed keywords

GRAPHENE; NANOMATERIAL;

ARTICLE; ELECTRODE; FREQUENCY MODULATION; NANOFABRICATION; PRIORITY JOURNAL; SEMICONDUCTOR;

GRAPHITE; MICROWAVES; RADIO; TRANSISTORS, ELECTRONIC;

EID: 84863927930     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1205696109     Document Type: Article

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