Applied physics: PbSe nanocrystal solids for n- and p-channel thin film field-effect transistors

Science

Volumn 310, Issue 5745, 2005, Pages 86-89

  Talapin, Dmitri V ^a   Murray, Christopher B ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FIELD EFFECT SEMICONDUCTOR DEVICES; OPTOELECTRONIC DEVICES; SWITCHING; THERMOELECTRICITY; THIN FILM TRANSISTORS; THIN FILMS;

HOLE MOBILITIES; PASSIVATING ELECTRON TRAPS;

NANOSTRUCTURED MATERIALS;

LEAD; METAL OXIDE; NANOPARTICLE; SELENIUM DERIVATIVE;

PHYSICS;

ARTICLE; CHEMICAL REACTION; CONDUCTANCE; CRYSTAL; CRYSTAL STRUCTURE; ELECTRON; FILM; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 26444534432     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1116703     Document Type: Article

References (26)

1. C. R. Kagan, P. Andry, Eds., Thin Film Transistors (Marcel Dekker, New York, 2003).
2. E. Artukovic, M. Kaempgen, D. S. Hecht, S. Roth, G. Gruner, Nano Lett. 5, 841 (2005).
3. X. Duan et al., Nature 425, 274 (2003).
4. D. B. Mitzi, L. L. Kosbar, C. E. Murray, M. Copel, A. Afzali, Nature 428, 299 (2004).
5. C. R. Kagan, D. B. Mitzi, C. D. Dimitrakopoulos, Science 286, 945 (1999).
6. F. Remacle, K. C. Beverly, J. R. Heath, R. D. Levine, J. Phys. Chem. B 107, 13892 (2003).
7. C. P. Collier, R. J. Saykally, J. J. Shiang, S. E. Henrichs, J. R. Heath, Science 277, 1978 (1997).
8. N. F. Mott, Conduction in Non-Crystalline Materials (Clarendon, Oxford, 1993), ed 2.
9. N. Y. Morgan et al., Phys. Rev. B 66, 075339 (2002).
10. M. B. Jarosz, V. J. Porter, B. R. Fisher, M. A. Kastner, M. G. Bawendi, Phys. Rev. B 70, 195327 (2004).
11. D. S. Ginger, N. C. Greenham, J. Appl. Phys. 87, 1361 (2000).
12. D. Vanmaekelbergh, P. Liljeroth, Chem. Soc. Rev. 34, 299 (2005).
13. B. R. Ridley, B. Nivi, J. M. Jacobson, Science 286, 746 (1999).
14. D. Yu, C. Wang, P. Guyot-Sionnest, Science 300, 1277 (2003).
15. D. Yu, C. Wang, B. L. Wehrenberg, P. Guyot-Sionnest, Phys. Rev. Lett. 92, 216802 (2004).
16. Materials and methods are available as supporting material on Science Online.
17. G. Allan, C. Dellerue, Phys. Rev. B 70, 245321 (2004).
18. C. H. Ben-Porat, O. Chernyavskaya, L. Brus, K.-S. Cho, C. B. Murray, J. Phys. Chem. B 108, 7814 (2004).
19. h state of a semiconductor nanocrystal has been demonstrated by Wehrenberg and Guyot-Sionnest (25).
20. O. L. Lazarenkova, A. A. Balandin, J. Appl. Phys. 89, 5509 (2001).
21. D. V. Talapin, A. L. Rogach, A. Kornowski, M. Haase, H. Weller, Nano Lett. 1, 207 (2001).
22. J. S. Steckel, S. Coe-Sullivan, V. Bulović, M. B. Bawendi, Adv. Mater. 15, 1862 (2003).
23. D. V. Talapin, unpublished data.
24. C. Klinke, J. Chen, A. Afzali, Ph. Avouris, Nano Lett. 5, 555 (2005).
25. B. L. Wehrenberg, P. Guyot-Sionnest, J. Am. Chem. Soc. 125, 7806 (2003).
26. We thank C. T. Black, C. R. Kagan, J. J. Urban, E. V. Shevchenko, V. Perebeinos, R. L. Sandstrom, and A. Afzali for helpful comments, suggestions, and stimulating discussions.