High-performance thin-film transistors using semiconductor nanowires and nanoribbons

Nature

Volumn 425, Issue 6955, 2003, Pages 274-278

  Duan, Xiangfeng ^a,b   Niu, Chunming ^a,b   Sahi, Vijendra ^a,b   Chen, Jian ^b   Parce, J Wallace ^b   Empedocles, Stephen ^b   Goldman, Jay L ^a,b  

^a Nanosys Inc   (United States)

^b Nanosys Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM SULFIDE; CARRIER MOBILITY; LOW TEMPERATURE EFFECTS; POLYSILICON; SINGLE CRYSTALS;

MACROELECTRONICS;

THIN FILM TRANSISTORS;

ARSENIC DERIVATIVE; CADMIUM DERIVATIVE; INDIUM; ORGANIC COMPOUND; PHOSPHORUS DERIVATIVE; PLASTIC; SILICON;

ARTICLE; CALCULATION; CHEMICAL REACTION; COST EFFECTIVENESS ANALYSIS; CRYSTAL; DEVICE; ELECTRONICS; FILM; HIGH TEMPERATURE PROCEDURES; LOW TEMPERATURE PROCEDURES; MOLECULAR WEIGHT; NANOTECHNOLOGY; PARAMETER; PRIORITY JOURNAL; SEMICONDUCTOR; TECHNIQUE;

EID: 0141605054     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature01996     Document Type: Article

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