AC performance of nanoelectronics: Towards a ballistic THz nanotube transistor

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1981-1986

  Burke, Peter J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; ELECTRIC FIELDS; ELECTRONS; ELECTROSTATICS; FERMI LEVEL; LITHOGRAPHY; MICROWAVES; TRANSISTORS;

BALLISTIC TRANSPORT; KINETIC INDUCTANCE; NANOELECTRONIC DEVICES; QUANTUM CAPACITANCE;

NANOSTRUCTURED MATERIALS;

EID: 3142671577     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.044     Document Type: Conference Paper

References (27)

1. Burke P.J. Luttinger liquid theory as a model of the GHz electrical properties of carbon nanotubes. IEEE Trans. Nanotechnol. 1(3):2002;129-144.
2. Burke P.J. An RF circuit model for carbon nanotubes. IEEE Trans. Nanotechnol. 2(1):2003;55-58.
3. Ramo S., Whinnery J.R., Van Duzer T. Fields and waves in communications electronics. 1994;Wiley, New York.
4. Li S, Yu Z, Gadde G, Burke PJ, Tang WC. Carbon nanotube growth for GHz devices. In: Proc 3rd IEEE Conf Nanotechnol, 2003.
5. Li S, Yu Z, Yen S-F, Tang WC, Burke PJ. Carbon nanotube transistor operation at 2.6 GHz. Nano Lett, in press.
6. Avouris Ph., Dresselhaus M.S., Dresselhaus G. Carbon Nanotubes: Synthesis, Structure, Properties, and Applications. Topics in Applied Physics. vol. 80:2001;Springer, Berlin, Germany.
7. Heinze S., Tersoff J., Martel R., Derycke V., Appenzeller J., Avouris Ph. Carbon nanotubes as Schottky barrier transistors. Phys. Rev. Lett. 89(10):2002;106801.
8. Yaish Y, Park JY, Rosenblatt S, Sazonova V, Brink M, McEuen PL. Electrical nanoprobing of semiconducting carbon nanotubes using an atomic force microscope, 6 May 2003. Available from: http://xxx.lanl.gov/abs/cont-mat/ 0305108.
9. Javey A., Guo J., Wang Q., Lundstrom M., Dai H. Ballistic carbon nanotube field-effect transistors. Nature. 424:2003;654-657.
10. McEuen P.L., Fuhrer M., Park H. Single-walled carbon nanotube electronics. IEEE Trans. Nanotechnol. 1(1):2002;78-85 Durkop T, Getty SA, Cobras E, Fuhrer MS. Extraordinary mobility in semiconducting carbon nanotubes. Nano Lett, published on web week of 12/5/03.
11. McEuen P.L., Fuhrer M., Park H. Single-walled carbon nanotube electronics. IEEE Trans. Nanotechnol. 1(1):2002;78-85 Durkop T, Getty SA, Cobras E, Fuhrer MS. Extraordinary mobility in semiconducting carbon nanotubes. Nano Lett, published on web week of 12/5/03.
12. Javey A., Kim H., Brink M., Wang Q., Ural A., Guo J., Mcintyre P., McEuen P., Lundstrom M., Dai H. High-K dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Mater. 1:2002;241-246.
13. Rosenblatt S., Yaish Y., Park J., Gore J., Sazonov V., McEuen P.L. High performance electrolyte gated carbon nanotube transisors. Nano Lett. 2(8):2002;869-872.
14. Guo J., Lundstrom M., Datta S. Performance projections for ballistic carbon nanotube field-effect transistors. Appl. Phys. Lett. 60(17):2002;3192- 3194.
15. Guo J., Goasguen S., Lundstrom M., Datta S. Metal-insulator-semiconductor electrostatics of carbon nanotubes. Appl. Phys. Lett. 81(8):2002.
16. Tans S., Verschueren A., Dekker C. Room-temperature transistor based on a single carbon nanotube. Nature. 393:1998;49-52.
17. Martel R., Schmidt T., Shea H.R., Hertel T., Avouris Ph. Single- and multi-wall carbon nanotube field-effect transistors. Appl. Phys. Lett. 73(17):1998;2447-2449.
18. Wind S.J., Appenzeller J., Martel R., Derycke V., Avouris Ph. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes. Appl. Phys. Lett. 80(20):2002;3817-3819.
19. Li S, Yu Z, Burke P. Silicon nitride gate dielectric for top gated carbon nanotube transistors. IEEE Trans Electron Dev, in press.
20. Kang S, Burke PJ, Pfeiffer LN, West KN. Ballistic transport at GHz frequencies in a 2d electron gas. Solid State Electron, in press.
21. Büttiker M., Christen T. Admittance and nonlinear transport in quantum wires, point contacts, and resonant tunneling barriers. Mesoscopic Electron Transport. 1997;Kluwer, Dordrecht, The Netherlands.
22. Williams RE, GaAs processing techniques, Artech House, 1984.
23. Liu W. Fundamentals of III-V devices. 1999;Wiley, New York. equation 6.235.
24. Sze Physics of semiconductor devices. 1981;Wiley, New York.
25. T 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs. In: 12th International Conference on Indium Phosphide and Related Materials, Proc., Williamsburg (VA), 2000, p. 87-90.
26. Reznikov M., Heiblum M., Shtrikman H., Mahalu D. Temporal correlation of electrons-suppression of shot-noise in a ballistic quantum point-contact. Phys. Rev. Lett. 75:1995;3340.
27. Caves C.M. Quantum limits on noise in linear-amplifiers. Phys. Rev. D. 26:1982;1817.