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Nanotechnology

Volumn 23, Issue 30, 2012, Pages

The effect of Ga content on In 2xGa 22xO 3 nanowire transistor characteristics

(3) Suh, Misook a Meyyappan, M b,c Ju, Sanghyun a

a Kyonggi University (South Korea)

b NASA AMES RESEARCH CENTER (United States)

c Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; ATOMIC PERCENTAGE; CUBIC CRYSTAL STRUCTURES; GA CONTENT; NANOWIRE TRANSISTORS; POSITIVE SHIFT; STRUCTURAL AND ELECTRICAL PROPERTIES; SUBTHRESHOLD; SWITCHING CHARACTERISTICS;

ELECTRIC PROPERTIES; INDIUM; NANOWIRES; X RAY DIFFRACTION;

GALLIUM;

EID: 84863670549 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/23/30/305203 Document Type: Article

Times cited : (15)

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