All-inorganic field effect transistors fabricated by printing

Science

Volumn 286, Issue 5440, 1999, Pages 746-749

  Ridley, Brent A ^a   Nivi, Babak ^a   Jacobson, Joseph M ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM DERIVATIVE; INORGANIC COMPOUND; ORGANIC COMPOUND; PYRIDINE; SELENIDE; SILICON;

ABSORPTION SPECTROSCOPY; ARTICLE; CONTROLLED STUDY; CRYSTALLIZATION; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRONICS; PRINTING; PRIORITY JOURNAL; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0033595698     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.286.5440.746     Document Type: Article

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30. We thank M. Bawendi, D. Antoniadis, C. Leatherdale, J. Taylor, S. Griffith, B. Hubert, and the staff at the Microsystems Technology Laboratory (MTL) for helpful discussion; M. Frongillo for assistance with TEM; L. Shaw for assistance with XPS; and M. Strojwas for help in device probing. TFT test structures were fabricated at the MTL at MIT. This work made use of MRSEC Shared Facilities supported by NSF under award number DMR-9400334. Supported by Defense Advanced Research Project Agency contract DABT63-99-C-0033 and by the MIT Media Lab's Things That Think (TTT) consortium. B.A.R. is partially supported by a graduate research fellowship from Motorola; B.N. is partially supported by a graduate research fellowship from NSF.