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Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

(7) Nougaret, L a Happy, H a Dambrine, G a Derycke, V b Bourgoin, J P b Green, A A c Hersam, M C c

a INSTITUT D ELECTRONIQUE (France)

b SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ (France)

c Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; YARN;

DENSE NETWORK; HIGH FREQUENCY PERFORMANCE; HIGH PURITY; HIGH-FREQUENCY ELECTRONICS; OPERATING FREQUENCY; RANDOM NETWORK; SEMICONDUCTING SWNTS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 67649214239 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3155212 Document Type: Article

Times cited : (166)

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