Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors

Physical Review Letters

Volumn 95, Issue 14, 2005, Pages

  Zhou, Xinjian ^a   Park, Ji Yong ^b   Huang, Shaoming ^c   Liu, Jie ^c   McEuen, Paul L ^a  

^a Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

^b Ajou University   (South Korea)

^c DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PHONON SCATTERING; CARBON NANOTUBE TRANSISTORS; DIFFUSIVE TRANSPORT REGIME; PEAK MOBILITY;

CARBON NANOTUBES; CARRIER MOBILITY; ELECTRIC CONDUCTANCE; LIGHT SCATTERING; PHONONS;

BAND STRUCTURE;

EID: 28844440496     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.95.146805     Document Type: Article

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