Air-stable conversion of separated carbon nanotube thin-film transistors from p-type to n-type using atomic layer deposition of high-κ oxide and its application in CMOS logic circuits

ACS Nano

Volumn 5, Issue 4, 2011, Pages 3284-3292

  Zhang, Jialu ^a   Wang, Chuan ^a   Fu, Yue ^a   Che, Yuchi ^a   Zhou, Chongwu ^a  

^a University of Southern California   (United States)

Author keywords

atomic layer deposition; carbon nanotubes; CMOS integrated circuits; n type transistors; nanotube separation; thin film transistors

Indexed keywords

AIR-STABLE; CHANNEL LENGTH; CMOS LOGIC CIRCUITS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONVERSION PROCESS; DESIGNED EXPERIMENTS; DEVICE MOBILITIES; ELECTRICAL PERFORMANCE; ELECTRICAL PROPERTY; EXCELLENT PERFORMANCE; HIGH PURITY; INPUT/OUTPUT BEHAVIORS; INTEGRATED CIRCUIT APPLICATIONS; LOGIC BLOCKS; MACROELECTRONICS; METAL CONTACTS; N-TYPE TRANSISTORS; NOISE MARGINS; ON-CURRENTS; ON/OFF RATIO; OXIDE PASSIVATION LAYER; P-TYPE; RAIL-TO-RAIL; SCALE INTEGRATION; SEMI-CONDUCTING NANOTUBES; SEMICONDUCTING CARBON NANOTUBES;

ATOMIC LAYER DEPOSITION; ATOMS; CARBON NANOTUBES; CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; INTEGRATED CIRCUITS; INTEGRATION; LUMPED PARAMETER NETWORKS; PASSIVATION; SWITCHING CIRCUITS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS;

LOGIC CIRCUITS;

EID: 79955454094     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2004298     Document Type: Article

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