Dual-gate graphene FETs with fT of 50 GHz

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 68-70

  Lin, Yu Ming ^a   Chiu, Hsin Ying ^a   Jenkins, Keith A ^a   Farmer, Damon B ^a   Avouris, Phaedon ^a   Valdes Garcia, Alberto ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Access resistance; Dual gate; Field effect transistor (FET); Graphene; Radio frequency (RF)

Indexed keywords

ACCESS RESISTANCE; DUAL GATES; GATE LENGTH; GRAPHENE TRANSISTORS; GRAPHENES; RADIO FREQUENCIES; RF APPLICATIONS;

CARRIER MOBILITY; CUTOFF FREQUENCY; GRAPHITE; MESFET DEVICES; RADIO; RADIO WAVES; SEMICONDUCTING SILICON;

FIELD EFFECT TRANSISTORS;

EID: 72949097851     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034876     Document Type: Article

References (8)

1. A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, "The electronic properties of graphene," Phys. Mod. Phys., vol.81, no.1, pp. 109-163, Jan. 2009.
2. I. Meric, M. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, "Current saturation in zero-bandgap, top-gated graphene field-effect transistors," Nature Nanotechnol., vol.3, no.11, pp. 654-659, Nov. 2008.
3. Y.-M. Lin, K. A. Jenkins, A. Valdes-Garcia, J. P. Small, D. B. Farmer, and P. Avouris, "Operation of graphene transistors at gigahertz frequencies," Nano Lett., vol.9, no.1, pp. 422-426, Jan. 2009.
4. I. Meric, N. Baklitskaya, P. Kim, and K. L. Shepard, "RF performance of top-gated, zero-bandgap graphene field-effect transistors," in IEDM Tech. Dig., 2008, pp. 1-4.
5. J. S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P. M. Campbell, G. Jernigan, J. L. Tedesco, B. VanMil, R. Myers-Ward, C. Eddy, Jr., and D. K. Gaskill, "Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates," IEEE Electron Device Lett., vol.30, no.6, pp. 650-652, Jun. 2008.
6. M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, "A graphene field-effect device," IEEE Electron Device Lett., vol.28, no.4, pp. 282-284, Apr. 2007.
7. 3 dielectric," Appl. Phys. Lett., vol.94, no.6, p. 062107, Feb. 2009. [Online]. Available:http:// www.itrs.net/Links/2008ITRS/Home2008.htm
8. D. B. Farmer, R. Golizadeh-Mojarad, V. Perebeinos, Y.-M. Lin, G. S. Tulevski, J. C. Tsang, and P. Avouris, "Chemical doping and electron-hole conduction asymmetry in graphene devices," Nano Lett., vol.9, no.1, pp. 388-392, Jan. 2009.