Bandlike transport in strongly coupled and doped quantum dot solids: A route to high-performance thin-film electronics

Nano Letters

Volumn 12, Issue 5, 2012, Pages 2631-2638

  Choi, Ji Hyuk ^a,c   Fafarman, Aaron T ^a   Oh, Soong Ju ^a   Ko, Dong Kyun ^a   Kim, David K ^a   Diroll, Benjamin T ^b   Muramoto, Shin ^d   Gillen, J Greg ^d   Murray, Christopher B ^a,b   Kagan, Cherie R ^a,b  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

^c National Institute of Standards and Technology ^*  (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

band transport; cadmium selenide; doping; field effect transistor; Quantum dots; thermal diffusion; thiocyanate

Indexed keywords

BAND-TRANSPORT; CADMIUM-SELENIDE; CDSE; ELECTRON DELOCALIZATION; FIELD-EFFECT MOBILITIES; GATE INSULATOR; INTERFACE TRAP DENSITY; QUANTUM DOT SOLIDS; ROOM TEMPERATURE; SHIFT-AND; TEMPERATURE-DEPENDENT MEASUREMENTS; THIOCYANATE;

CADMIUM; CADMIUM COMPOUNDS; DOPING (ADDITIVES); ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; THERMAL DIFFUSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84861082353     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl301104z     Document Type: Article

References (56)

1. Alivisatos, A. P. Science 1996, 271, 933-937
2. Bawendi, M. G.; Steigerwald, M. L.; Brus, L. E. Annu. Rev. Phys. Chem. 1990, 41, 477-496
3. Schedelbeck, G.; Wegscheider, W.; Bichler, M.; Abstreiter, G. Science 1997, 278, 1792-1795
4. Bayer, M.; Hawrylak, P.; Hinzer, K.; Fafard, S.; Korkusinski, M.; Wasilewski, Z.; Stern, O.; Forchel, A. Science 2001, 291, 451
5. Murray, C. B.; Kagan, C. R.; Bawendi, M. G. Science 1995, 270, 1335-1338
6. Chen, Z.; Moore, J.; Radtke, G.; Sirringhaus, H.; O'Brien, S. J. Am. Chem. Soc. 2007, 129, 15702-15709
7. Overgaag, K.; Evers, W.; Nijs, B.; de; Koole, R.; Meeldijk, J.; Vanmaekelbergh, D. J. Am. Chem. Soc. 2008, 130, 7833-7835
8. Urban, J. J.; Talapin, D. V.; Shevchenko, E. V.; Kagan, C. R.; Murray, C. B. Nat. Mater. 2007, 6, 115-121
9. Talapin, D. V.; Lee, J.-S.; Kovalenko, M. V.; Shevchenko, E. V. Chem. Rev. 2010, 110, 389-458
10. Vanmaekelbergh, D.; Liljeroth, P. Chem. Soc. Rev. 2005, 34, 299-312
11. Qu, L.; Peng, X. J. Am. Chem. Soc. 2002, 124, 2049-2055
12. Beverly, K.; Sample, J.; Sampaio, J.; Remacle, F.; Heath, J.; Levine, R. Proc. Natl. Acad. Sci. U.S.A. 2002, 99, 6456-6459
13. Andres, R. P.; Bielefeld, J. D.; Henderson, J. I.; Janes, D. B.; Kolagunta, V. R.; Kubiak, C. P.; Mahoney, W. J.; Osifchin, R. G. Science 1996, 273, 1690-1693
14. Jarosz, M.; Porter, V.; Fisher, B.; Kastner, M.; Bawendi, M. Phys. Rev. B 2004, 70, 195327
15. Norris, D. J.; Efros, A. L.; Erwin, S. C. Science 2008, 319, 1776-1779
16. Talapin, D. V.; Murray, C. B. Science 2005, 310, 86-89
17. Kang, M. S.; Sahu, A.; Norris, D. J.; Frisbie, C. D. Nano Lett. 2010, 10, 3727-3732
18. Yu, D.; Wehrenberg, B. L.; Jha, P.; Ma, J.; Guyot-Sionnest, P. J. Appl. Phys. 2006, 99, 104315
19. Fratini, S.; Ciuchi, S. Phys. Rev. Lett. 2009, 103, 266601
20. Lee, J.-S.; Kovalenko, M. V.; Huang, J.; Chung, D. S.; Talapin, D. V. Nat. Nanotechnol 2011, 6, 348-352
21. Fafarman, A. T.; Koh, W.-kyu; Diroll, B. T.; Kim, D. K.; Ko, D.-K.; Oh, S. J.; Ye, X.; Doan-Nguyen, V.; Crump, M. R.; Reifsnyder, D. C.; Murray, C. B.; Kagan, C. R. J. Am. Chem. Soc. 2011, 133, 15753-15761
22. Tang, J.; Kemp, K. W.; Hoogland, S.; Jeong, K. S.; Liu, H.; Levina, L.; Furukawa, M.; Wang, X.; Debnath, R.; Cha, D.; Chou, K. W.; Fischer, A.; Amassian, A.; Asbury, J. B.; Sargent, E. H. Nat. Mater. 2011, 10, 765-771
23. Talgorn, E.; Gao, Y.; Aerts, M.; Kunneman, L. T.; Schins, J. M.; Savenije, T. J.; Huis, M. A.; van; Zant, H. S. J.; van der; Houtepen, A. J.; Siebbeles, L. D. A. Nat. Nanotechnol. 2011, 6, 733-739
24. Yu, D.; Wang, C.; Guyot-Sionnest, P. Science 2003, 300, 1277-1280
25. Shim, M.; Guyot-Sionnest, P. Nature 2000, 407, 981-983
26. Geyer, S. M.; Allen, P. M.; Chang, L.-Y.; Wong, C. R.; Osedach, T. P.; Zhao, N.; Bulovic, V.; Bawendi, M. G. ACS Nano 2010, 4, 7373-7378
27. Mocatta, D.; Cohen, G.; Schattner, J.; Millo, O.; Rabani, E.; Banin, U. Science 2011, 332, 77-81
28. Roy, S.; Tuinenga, C.; Fungura, F.; Dagtepe, P.; Chikan, V.; Jasinski, J. J. Phys. Chem. C 2009, 113, 13008-13015
29. Norris, D. J.; Yao, N.; Charnock, F. T.; Kennedy, T. A. Nano Lett. 2001, 1, 3-7
30. Wood, V.; Panzer, M. J.; Chen, J.; Bradley, M. S.; Halpert, J. E.; Bawendi, M. G.; Bulović, V. Adv. Mater. 2009, 21, 2151-2155
31. Koh, W.-K.; Saudari, S. R.; Fafarman, A. T.; Kagan, C. R.; Murray, C. B. Nano Lett. 2011, 11, 4764-4767
32. Zallen, R. The Physics of Amorphous Solids; Wiley-VCH: New York, 1998.
33. Mott, N. F.; Davis, E. A. Electronic Processes in Non-Crystalline Materials, 2 nd ed.; Oxford University Press: New York, 1979.
34. Tulevski, G. S.; Nuckolls, C.; Afzali, A.; Graham, T. O.; Kagan, C. R. Appl. Phys. Lett. 2006, 89, 183101
35. Reeves, G. K.; Harrison, H. B. IEEE Electron. Device Lett. 1982, 3, 111-113
36. Kang, M. S.; Sahu, A.; Norris, D. J.; Frisbie, C. D. Nano Lett. 2011, 11, 3887-3892
37. Torsi, L.; Dodabalapur, A.; Rothberg, L.; Fung, A.; Katz, H. Science 1996, 272, 1462-1464
38. Comber, P.; Le; Spear, W. Phys. Rev. Lett. 1970, 25, 509-511
39. Contrary to the results of previous studies that attribute large redshifts to changes dielectric [ Wolcott, A.; Doyeux, V.; Nelson, C. A.; Gearba, R.; Lei, K. W.; Yager, K. G.; Dolocan, A. D.; Williams, K.; Nguyen, D.; Zhu, X.-Y. J. Phys. Chem. Lett. 2011, 2, 795 ], DMF has a larger dielectric than solid CdSe; thus a blueshift would be expected based on dielectric effects alone. While such effects may reduce the size of the redshift observed here and attributed to electronic coupling, the effects should be small, since there is not a large relative change in dielectric between the two environments compared to when the original solution is hexane
40. Murray, C. B.; Kagan, C. R.; Bawendi, M. G. Annu. Rev. Mater. Sci. 2000, 30, 545-610
41. Gunasekaran, S.; Ponnusamy, S. Cryst. Res. Technol. 2006, 41, 130-137
42. Vossmeyer, T.; Katsikas, L.; Giersig, M.; Popovic, I. G.; Diesner, K.; Chemseddine, A.; Eychmueller, A.; Weller, H. J. Phys. Chem. 1994, 98, 7665-7673
43. Mićić, O. I.; Ahrenkiel, S. P.; Nozik, A. J. Appl. Phys. Lett. 2001, 78, 4022
44. Artemyev, M. V..; Bibik, A. I..; Gurinovich, L. I..; Gaponenko, S. V..; Jaschinski, H..; Woggon, U. Phys. Status Solidi B 2001, 224, 393-396
45. Williams, K. J.; Tisdale, W. A.; Leschkies, K. S.; Haugstad, G.; Norris, D. J.; Aydil, E. S.; Zhu, X.-Y. ACS Nano 2009, 3, 1532-1538
46. Gao, Y.; Talgorn, E.; Aerts, M.; Trinh, M. T.; Schins, J. M.; Houtepen, A. J.; Siebbeles, L. D. A. Nano Lett. 2011, 11, 5471-5476
47. e could range as high as 180 meV in this estimate
48. Kittel, C. Introduction to Solid State Physics, 8 th ed.; John Wiley & Sons: Hoboken, NJ, 2005; pp 232-235.
49. Underwood, D. F.; Kippeny, T.; Rosenthal, S. J. J. Phys. Chem. B. 2001, 105, 436-443
50. Garcia, V. M.; George, P. J.; Nair, M. S.; Nair, R. K. J. Electrochem. Soc. 1996, 143, 2892-2895
51. Aneva, Z.; Nesheva, D.; Main, C.; Reynolds, S.; Fitzgerald, A.; Vateva, E. Semicond. Sci. Technol. 2008, 23, 095002
52. He, Z.; Jie, J.; Zhang, W.; Zhang, W.; Luo, L.; Fan, X.; Yuan, G.; Bello, I.; Lee, S.-T. Small 2009, 5, 345-350
53. Waxman, A.; Mark, G. Solid-State Electron. 1969, 12, 751-764
54. Scilla, G. J.; Luo, F. C. Appl. Phys. Lett. 1983, 42, 538-540
55. George, P. J.; Sánchez, A.; Nair, P. K.; Nair, M. T. S. Appl. Phys. Lett. 1995, 66, 3624
56. Kim, D. K.; Lai, Y.; Vemulkar, T. R.; Kagan, C. R. ACS Nano 2011, 5, 10074-10083