Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Nature Nanotechnology

Volumn 2, Issue 6, 2007, Pages 378-384

  Ju, Sanghyun ^a   Facchetti, Antonio ^b   Xuan, Yi ^a   Liu, Jun ^b   Ishikawa, Fumiaki ^c   Ye, Peide ^a   Zhou, Chongwu ^c   Marks, Tobin J ^b   Janes, David B ^a  

^a PURDUE UNIVERSITY   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

^c University of Southern California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ENERGY EFFICIENCY; FABRICATION; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; NANOWIRES; ORGANIC LIGHT EMITTING DIODES (OLED); PIXELS; SUBSTRATES; THIN FILM TRANSISTORS; TRANSPARENCY; ZINC OXIDE;

ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE DISPLAYS; DISPLAY TECHNOLOGIES; ELECTRONIC CIRCUITRY; FLEXIBLE PLASTIC SUBSTRATES; HIGH CARRIER MOBILITY; MECHANICAL FLEXIBILITY; OPTICAL TRANSPARENCY; TRANSISTOR CHARACTERISTICS;

FLEXIBLE DISPLAYS;

INDIUM; NANOWIRE; TIN DERIVATIVE; ZINC OXIDE;

ARTICLE; ELECTRICITY; ELECTRONICS; LIGHT EMITTING DIODE; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 34249944427     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2007.151     Document Type: Article

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