Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study

Applied Physics Letters

Volumn 93, Issue 22, 2008, Pages

  Umezawa, Naoto ^a   Sato, Motoyuki ^b   Shiraishi, Kenji ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; HAFNIUM; HAFNIUM COMPOUNDS; MAGNESIUM; MAGNESIUM PRINTING PLATES; OXYGEN; SOLID STATE PHYSICS; TRANSISTORS; VACANCIES;

BASED GATES; CHARGED DEFECTS; COMPREHENSIVE STUDIES; DEFECT SITES; FIRST-PRINCIPLES CALCULATIONS; INSULATING OXIDES; POSITIVE CHARGES;

OXYGEN VACANCIES;

EID: 57349120035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3040306     Document Type: Article

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