Carbon nanotube field effect transistors with suspended graphene gates

Nano Letters

Volumn 11, Issue 9, 2011, Pages 3569-3575

  Svensson, Johannes ^a   Lindahl, Niklas ^b   Yun, Hoyeol ^c   Seo, Miri ^c   Midtvedt, Daniel ^d   Tarakanov, Yury ^d   Lindvall, Niclas ^d   Nerushev, Oleg ^e   Kinaret, Jari ^d   Lee, Sangwook ^c   Campbell, Eleanor E B ^c,e  

^a LUND UNIVERSITY   (Sweden)

^b UNIVERSITY OF GOTHENBURG   (Sweden)

^c Konkuk University   (South Korea)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^e UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Carbon nanotube; field effect transistor; graphene; movable gate electrode

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; DEVICE GEOMETRIES; ELECTROSTATIC DEFLECTION; EXPERIMENTAL MEASUREMENTS; FIELD EFFECTS; GATE ELECTRODES; HIGH FREQUENCY HF; MASS SENSING; MECHANICAL MOTIONS; SENSITIVE MEASUREMENT; SUSPENDED MEMBRANES; SWITCHING CHARACTERISTICS;

ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; GRAPHENE;

GATES (TRANSISTOR);

CARBON NANOTUBE; GRAPHITE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRODE; METHODOLOGY; NANOTECHNOLOGY; STATIC ELECTRICITY; TEMPERATURE;

ELECTRIC CONDUCTIVITY; ELECTRODES; GRAPHITE; MICROSCOPY, ATOMIC FORCE; NANOTECHNOLOGY; NANOTUBES, CARBON; STATIC ELECTRICITY; TEMPERATURE;

EID: 80052819859     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201280q     Document Type: Article

References (35)

1. Sze, S. M. Physics of Semiconductor Devices; Wiley: New York, 1985.
2. Bjork, M. T. Appl. Phys. Lett. 2007, 90, 142110
3. Bjork, M. T. Appl. Phys. Lett. 2008, 92, 193504
4. Appenzeller, J. Phys. Rev. Lett. 2004, 93, 196805
5. Abele, N. IEDM Tech. Dig. 2005, 479
6. Salahuddin, S. Nano Lett. 2007, 8, 405
7. Sazonova, V. Nature 2004, 431, 284
8. Chen, C. Y. Nat. Nanotechnol. 2009, 4, 861
9. Tarakanov, Y. A. Nano Lett. 2007, 7, 2291
10. Svensson, J. Nanotechnology 2008, 19, 325201
11. Lee, C. Science 2008, 321, 385
12. Duerkop, T. Nano Lett. 2004, 4, 35
13. Seidel, R. V. Nano Lett. 2005, 5, 147
14. Franklin, A. D. Nat. Nanotechnol. 2010, 5, 858
15. Garcia-Sanchez, D. Nano Lett. 2008, 8, 1399
16. Wong, C. L. J. Micromech. Microeng. 2010, 20, 115029
17. Svensson, J. Nanotechnology 2009, 20, 175204
18. Roddaro, S. Nano Lett. 2007, 7, 2707
19. Novoselov, K. S. Science 2004, 306, 666
20. Jiao, L. J. Am. Chem. Soc. 2008, 130, 12612
21. Peng, N. Nanotechnology 2008, 19, 465201
22. Wang, X. Science 2009, 324, 768
23. Shengdong, L., 2004, 22, 3112.
24. Lefevre, R. Phys. Rev. Lett. 2005, 95, 185504
25. Zhou, X. Phys. Rev. Lett. 2005, 95, 146805
26. Lin, Y.-M. IEEE Electron Device Lett. 2005, 26, 823
27. Nathanson, H. C. IEEE Trans. Electron Devices 1967, 14, 117
28. Eichler, A. Nat. Nanotechnol. 2011, 6, 339
29. Atalaya, J. Nano Lett. 2008, 8, 4196
30. Atalaya, J. Europhys. Lett. 2010, 91, 48001
31. Voje, A., In preparation.
32. Arun, A. Nanotechnology 2011, 22, 055204
33. Bunch, J. S. Science 2007, 315, 490
34. Chiu, H. Y. Nano Lett. 2008, 8, 4342
35. Kaveh, M. M. Appl. Phys. Lett. 2009, 95, 183105