Cation-based resistance change memory

Journal of Physics D: Applied Physics

Volumn 46, Issue 8, 2013, Pages

  Valov, Ilia ^a   Kozicki, Michael N ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATION TRANSPORTS; CHALCOGENIDE MATERIALS; CONDUCTING FILAMENT; COPPER IONS; DEVICE OPERATIONS; DEVICE PERFORMANCE; ELECTROCHEMICAL THEORY; ION-CONDUCTING; MEMORY TECHNOLOGY; NANO SCALE; NANOSCALE DEVICE; RATE-LIMITING STEPS; RESISTANCE CHANGE; SWITCHING CHARACTERISTICS;

METAL IONS; NANOTECHNOLOGY; POSITIVE IONS; REDOX REACTIONS;

RANDOM ACCESS STORAGE;

EID: 84873649755     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/7/074005     Document Type: Article

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