Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process

Solid-State Electronics

Volumn 58, Issue 1, 2011, Pages 54-61

  Gopalan, C ^a   Ma, Y ^a   Gallo, T ^a   Wang, J ^a   Runnion, E ^a   Saenz, J ^a   Koushan, F ^a   Blanchard, P ^a   Hollmer, S ^a  

^a Adesto Technologies   (United States)

Author keywords

CBRAM; CMOS processing; Electrodeposition; Embedded non volatile memory; Low power; Solid electrolyte

Indexed keywords

CBRAM; CMOS PROCESSING; CMOS PROCESSS; DISCRETE DEVICES; EMBEDDED APPLICATION; FUNCTIONAL OPERATION; INDUSTRY STANDARDS; LOGICAL DATA; LOW POWER; LOW-POWER CHARACTERISTICS; MEMORY ARRAY; NON-VOLATILE MEMORIES; RANDOM ACCESS MEMORIES; REVERSIBLE SWITCHING;

CMOS INTEGRATED CIRCUITS; ELECTRODEPOSITION; SOLID ELECTROLYTES;

RANDOM ACCESS STORAGE;

EID: 79952282675     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.11.024     Document Type: Conference Paper

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