In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory

Advanced Materials

Volumn 23, Issue 29, 2011, Pages 3272-3277

  Choi, Sang Jun ^b   Park, Gyeong Su ^c   Kim, Ki Hong ^c   Cho, Soohaeng ^d   Yang, Woo Young ^c   Li, Xiang Shu ^c   Moon, Jung Hwan ^a   Lee, Kyung Jin ^a   Kim, Kinam ^c  

^a Korea University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d Yonsei University Wonju   (South Korea)

Author keywords

filament model; mutlilevel resistance state; RE RAM; resistive switching effect; solid electrolyte resistive switching memory

Indexed keywords

CONDUCTING FILAMENT; IN-SITU OBSERVATIONS; IN-SITU TEM; MICROSCOPIC SWITCHING; MUTLILEVEL RESISTANCE STATE; RE-RAM; RESISTANCE CHANGE; RESISTIVE SWITCHING;

ELECTRIC RESISTANCE; RANDOM ACCESS STORAGE; SOLID ELECTROLYTES; SWITCHING SYSTEMS;

SWITCHING;

COPPER; ELECTROLYTE; NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRICITY; ELECTRODE;

COPPER; ELECTRICITY; ELECTRODES; ELECTROLYTES; NANOSTRUCTURES; SILICON DIOXIDE;

EID: 79960900595     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201100507     Document Type: Article

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