Selection of optimized materials for CBRAM based on HT-XRD and electrical test results

Journal of the Electrochemical Society

Volumn 156, Issue 9, 2009, Pages

  Bruchhaus, Rainer ^a   Honal, Matthias ^b   Symanczyk, Ralf ^a   Kund, Michael ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SOLIDS; BACK END OF THE LINES; BISTABLES; CANDIDATE MATERIALS; ELECTRICAL CHARACTERIZATION; ELECTRICAL PERFORMANCE; ELECTRICAL TESTS; ELECTROCHEMICAL REDOX; HIGH MOBILITY; HIGH TEMPERATURE X-RAY DIFFRACTION; LAYER STACKS; LOW TEMPERATURES; LOW-POWER OPERATION; MATERIAL SYSTEMS; MEMORY ELEMENT; MEMORY TECHNOLOGY; METALLIC FILAMENTS; NANO SCALE; ONSET TEMPERATURE; PEAK TEMPERATURES; RANDOM ACCESS MEMORIES; SWITCHING SPEED; THERMAL BUDGET; THERMAL STABILITY; THERMAL-ANNEALING; XRD;

CHALCOGENIDES; CRYSTALLIZATION; GERMANIUM; MATERIALS; PHASE CHANGE MEMORY; RANDOM ACCESS STORAGE; REDOX REACTIONS; SILVER; SOLID STATE REACTIONS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SOLID ELECTROLYTES;

EID: 68049129430     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3160570     Document Type: Article

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