Voltage-driven on-off transition and tradeoff with program and erase current in Programmable Metallization Cell (PMC) memory

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 553-555

  Kamalanathan, Deepak ^a   Russo, Ugo ^a,b   Ielmini, Daniele ^b   Kozicki, Michael N ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Conductive bridging RAM (CBRAM); Ionic conduction; Nonvolatile memory; ON state stability; Programmable metallization cell (PMC); Reliability modeling

Indexed keywords

CONDUCTIVE BRIDGING RAM (CBRAM); NONVOLATILE MEMORY; ON-STATE STABILITY; PROGRAMMABLE METALLIZATION CELL (PMC); RELIABILITY MODELING;

COMMUNICATION CHANNELS (INFORMATION THEORY); IONIC CONDUCTION; RANDOM ACCESS STORAGE; STABILITY;

METALLIZING;

EID: 67349169782     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2016991     Document Type: Article

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