Inherent diode isolation in programmable metallization cell resistive memory elements

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 817-826

  Puthentheradam, Sarath C ^a   Schroder, Dieter K ^b   Kozicki, Michael N ^a,c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Arizona State University   (United States)

^c Adesto Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN CHARACTERISTICS; DOPED SILICON; HEAVILY DOPED; LOGICAL BITS; LOW ENERGIES; LOW-LEAKAGE CURRENT; MEMORY ARRAY; MEMORY ELEMENT; MULTILEVEL CELL; NANO SCALE; ON-STATE RESISTANCE; ONE-TIME PROGRAMMABLES; PROGRAMMABLE METALLIZATION CELLS; PROGRAMMING CURRENTS; RESISTANCE LEVEL; REVERSE BIAS LEAKAGE CURRENT; REVERSE BREAKDOWN VOLTAGE; SCHOTTKY CONTACTS; SILICON ELECTRODE; STORAGE ELEMENTS;

COPPER; DISTILLATION; METALLIZING; SILICON; SILICON OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79959346864     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6292-5     Document Type: Article

References (22)

1. S. Lai, in IEDM (2008), pp. 1-6.
2. R. Waser, M. Aono, Nat. Mater. 6(11), 833 (2007).
3. M.J. Lee, Y. Park, B.S. Kang, S.E. Ahn, C. Lee, K. Kim, W. Xianyu, G. Stefanovich, J. Lee, S.J. Chung, Y.H. Kim, C.S. Lee, J.B. Park, I.K. Yoo, in IEDM (2007), pp. 771-774.
4. Q. Zuo, S. Long, S. Yang, Q. Liu, L. Shao, Q. Wang, S. Zhang, Y. Li, Y. Wang, M. Liu, IEEE Electron Device Lett. 31(4), 344 (2010).
5. M.N. Kozicki, M. Balakrishnan, C. Gopalan, C. Ratnakumar, M. Mitkova, in Proc. of NVMTS (2005), pp. 83-89.
6. M. Kund, G. Beitel, C.U. Pinnow, T. Rohr, J. Schumann, R. Symanczyk, K.D. Ufert, G. Muller, in IEDM (2005), pp. 754- 757.
7. M.N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, M. Mitkova, in Proc. of NVMTS (2004), pp. 10-17.
8. M.N. Kozicki, C. Gopalan, M. Balakrishnan, M. Mitkova, IEEE Trans. Nanotechnol. 5(5), 535 (2006).
9. M. Balakrishnan, S. Thermadam, M. Mitkova, M. Kozicki, in Proc. of NVMTS (2006), pp. 104-110.
10. C. Schindler, S. Thermadam, R. Waser, M. Kozicki, IEEE Trans. Electron Devices 54(10), 2762 (2007).
11. C. Schindler, M. Weides, M.N. Kozicki, R. Waser, Appl. Phys. Lett. 92(12), 122910 (2008).
12. H. Toda, Patent US 7, 606, 059 (2009).
13. S.P. Thermadam, S.K. Bhagat, T.L. Alford, Y. Sakaguchi, M.N. Kozicki, M. Mitkova, Thin Solid Films 518(12), 3293 (2010).
14. N. Gilbert, M. Kozicki, IEEE J. Solid-State Circuits 42(6), 1383 (2007).
15. S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 2001).
16. U. Russo, D. Kamalanathan, D. Ielmini, A.L. Lacaita, M.N. Kozicki, IEEE Trans. Electron Devices 56(5), 1040 (2009).
17. D. Kamalanathan, U. Russo, D. Ielmini, M. Kozicki, IEEE Electron Device Lett. 30(5), 553 (2009).
18. M.N. Kozicki, C. Ratnakumar, M. Mitkova, in Proc. of NVMTS (2006), pp. 111-115.
19. M. Shimada, M. Moriyama, K. Ito, S. Tsukimoto, M. Murakami, J. Vac. Sci. Technol. B 24(1), 190 (2006).
20. M.P. Lepselter, S.M. Sze, Bell Syst. Tech. J. 47, 195 (1968).
21. G.D.J. Smit, S. Rogge, T.M. Klapwijk, Appl. Phys. Lett. 81(20), 3852 (2002).
22. M. Hugelmann, W. Schindler, Appl. Phys. Lett. 85(16), 3608 (2004).