Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories

Journal of Solid State Electrochemistry

Volumn 17, Issue 2, 2013, Pages 365-371

  Valov, I ^a   Staikov, G ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Atomic switch; ECM; Electrochemical nucleation; ReRAM; RRAM memory; VCM

Indexed keywords

ATOMS; ELECTRIC FIELDS; MILITARY ELECTRONIC COUNTERMEASURES; NUCLEATION; OXIDE FILMS; RRAM; RUBIDIUM COMPOUNDS; SILVER COMPOUNDS; SOLID ELECTROLYTES; SWITCHING;

ATOMIC SWITCHES; ELECTROCHEMICAL METALLIZATION (ECM); ELECTROCHEMICAL NUCLEATION; ELECTROCHEMICAL SYSTEMS; HIGH ELECTRIC FIELDS; NUCLEATION AND GROWTH; NUCLEATION PROCESS; RESISTIVE SWITCHING MEMORY;

CRYSTALLIZATION;

EID: 84876722893     PISSN: 14328488     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10008-012-1890-5     Document Type: Article

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