Copper sulfide-based resistance change memory

Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07

Volumn , Issue , 2007, Pages 76-78

  Kim, Sung Woo ^b   Nishi, Yoshio ^a,b  

^a IEEE

^b Stanford University   (United States)

Author keywords

Anodic polarization; Copper sulfide (Cu2S); Nonvolatile memory (NVM); Resistance switching

Indexed keywords

COPPER; OPTICAL DESIGN;

ANODIC POLARIZATION; COPPER SULFIDE; COPPER SULFIDE (CU2S); ELECTRIC BIAS; ELECTRICAL CHARACTERIZATIONS; FUTURE MEMORY; NON-VOLATILE; NON-VOLATILE MEMORY TECHNOLOGY; NONVOLATILE MEMORIES; NONVOLATILE MEMORY (NVM); RESISTANCE CHANGES; RESISTANCE SWITCHING;

DATA STORAGE EQUIPMENT;

EID: 48549098791     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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