Atomic switch: Atom/ion movement controlled devices for beyond von-Neumann computers

Advanced Materials

Volumn 24, Issue 2, 2012, Pages 252-267

  Hasegawa, Tsuyoshi ^a,b   Terabe, Kazuya ^a   Tsuruoka, Tohru ^a,b   Aono, Masakazu ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

atomic switches; electrochemical switches; nanodevices; nanoionics

Indexed keywords

ATOMIC SWITCHES; CLUSTER SIZES; CONDUCTIVE CHANNELS; CONDUCTIVE PATHS; DOWN-SCALING; ELECTROCHEMICAL SWITCH; ELECTRONIC SYSTEMS; LOW-POWER CONSUMPTION; METAL ATOMS; NANO-DEVICES; NANO-METER SCALE; NANOIONICS; NONVOLATILITY; NOVEL FUNCTIONS; ON/OFF RATIO; OPERATING MECHANISM; REDUCTION/OXIDATION; SWITCHING OPERATIONS; TECHNOLOGY NODES;

ATOMS; CONDUCTIVE MATERIALS; ELECTRONICS ENGINEERING; EQUIPMENT; SEMICONDUCTOR DEVICES;

ELECTRIC SWITCHES;

GOLD; ION; NANOWIRE;

ARTICLE; CHEMISTRY; COMPUTER; ELECTRODE; INSTRUMENTATION; NANOTECHNOLOGY; SEMICONDUCTOR;

COMPUTERS; ELECTRODES; GOLD; IONS; NANOTECHNOLOGY; NANOWIRES; SEMICONDUCTORS;

EID: 84855463299     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201102597     Document Type: Article

References (88)

1. R. Waser, M. Aono, Nat. Mater. 2007, 6, 833.
2. H. Akinaga, H. Shima, Proc. IEEE 2010, 98, 2237.
3. D. M. Eigler, C. P. Lutz, W. E. Rudge, Nature 1991, 352, 600.
4. D. P. E. Smith, Science 1995, 269, 371.
5. J. I. Pascual, J. Mendez, J. Gomez-Herrero, A. M. Baro, N. Garcia, V. T. Binh, Phys. Rev. Lett. 1993, 71, 1852.
6. L. Ercker, Treaties on Ores and Assaying, 1574, (translated by, A. G. Sisco, C. S. Smith, Univ. Chicago, pp. 177, 1951).
7. Y. Hirose, H. Hirose, J. Appl. Phys. 1976, 47, 2767.
8. H. Ikeda, K. Tada, in Applications of solid electrolytes (Eds:, T. Takahashi, A. Kozaw,) Academic Press, Cleaveland 1980, pp. 40-45.
9. T. Kudoh, K. Fueki, in Solid State Ionics, Kodansha/VCH, Tokyo, 1990.
10. K. Terabe, T. Nakayama, T. Hasegawa, M. Aono, Appl. Phys. Lett. 2002, 80, 4009.
11. H. Sone, T. Tamura, K. Miyazaki, S. Hosaka, MicroElectronic Engineering 2006, 831, 487.
12. K. Terabe, T. Nakayama, T. Hasegawa, M. Aono, J. Appl. Phys. 2002, 91, 10110.
13. K. Terabe, T. Hasegawa, T. Nakayama, M. Aono, Riken Review 2001, 37, 7.
14. K. Terabe, T. Hasegawa, T. Nakayama, M. Aono, Nature 2005, 433, 47.
15. T. Tamura, T. Hasegawa, K. Terabe, T. Nakayama, T. Sakamoto, H. Sunamura, H. Kawaura, S. Hosaka, M. Aono, Jpn. J. Appl. Phys. 2006, 45, L364.
16. T. Tamura, T. Hasegawa, K. Terabe, T. Nakayama, T. Sakamoto, H. Sunamura, H. Kawaura, S. Hosaka, M. Aono, J. Phys.: Conf. Series 2007, 61, 1157.
17. I. Valov, I. Sapezanskaia, A. Nayak, T. Tsuruoka, T. Bredow, T. Hasegawa, G. Staikov, M. Aono, R. Waser, in preparation.
18. A. Nayak, T. Tamura, T. Tsuruoka, K. Terabe, S. Hosaka, T. Hasegawa, M. Aono, J. Phys. Chem. Lett. 2010, 1, 604.
19. H. Ohnishi, Y. Kondo, K. Takayanagi, Nature 1998, 395, 780.
20. A. Nayak, T. Tsuruoka, K. Terabe, T. Hasegawa, M. Aono, Nanotechnol. 2011, 22, 235201.
21. A. Nayak, T. Tsuruoka, K. Terabe, T. Hasegawa, M. Aono, Appl. Phys. Lett. 2011, 98, 233501.
22. J. R. Heath, P. J. Kuekes, G. S. Snider, R. S. Williams, Science 1998, 280, 1716.
23. Q. Xia, J. J. Yang, W. Wu, X. Li, R. S. Williams, Nano Lett. 2010, 10, 2909.
24. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 2009, 21, 2632.
25. M. Kundu, K. Terabe, T. Hasegawa, M. Aono, J. Appl. Phys. 2006, 99, 103501.
26. M. Morales-Masis, S. J. van der Molen, W. T. Fu, M. B. Hesselberth, J. M. van Ruitenbeek, Nanotechnol. 2009, 20, 095710.
27. Ch. Liang, K. Terabe, T. Hasegawa, R. Negishi, T. Tamura, M. Aono, Small, 2005, 10, 971.
28. T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama, M. Aono, Appl. Phys. Lett. 2003, 82, 3033.
29. M. Kundu, T. Hasegawa, K. Terabe, M. Aono, J. Appl. Phys. 2008, 103, 073523.
30. R. Soni, P. Meuffels, A. Petraru, M. Weides, C. Kugeler, R. waser, H. Kohlstedt, J. Appl. Phys. 2010, 107, 024517.
31. T. Sakamoto, K. Lister, N. Banno, T. Hasegawa, K. Terabe, M. Aono, Appl. Phys. Lett. 2007, 91, 092110.
32. M. Haemori, T. Nagata, T. Chikyow, APEX, 2009, 2, 061401.
33. C. Schindler, M. Weides, M. N. Kozicki, R. Waser, Appl. Phys. Lett. 2008, 92, 122910.
34. K. Tsunoda, Y. Fukuzumi, J. R. Jameson, Z. wang, P. B. Griffin, Y. Nishi, Appl. Phys. Lett. 2007, 90, 113501.
35. A. Chen, S. haddad, Y. Wu, T. Fang, Z. Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. van Buskirk, M. Taguchi, in Tech. Dig., Int. Electron Devices Meeting, pp. 765-768, 2005.
36. K. Aratani, K. Ohba, T. Mizuguchi, S. Yasuda, T. Shiimoto, T. Tsushima, T. Sone, K. Endo, A. Kouchiyama, S. Sasaki, A. Maesaka, N. Yamada, H. Narisawa, in Tech. Dig. of the IEEE Int. Electron Devices Meeting, 2007, pp. 783-786.
37. Q. Li, Ch. Dou, Y. Wang, S. Long, W. Wang, M. Liu, M. Zhang, J. Chen, Appl. Phys. Lett. 2009, 95, 023501.
38. Y. C. Yang, F. Pan, Q. Liu, F. Zeng, Nano Lett. 2009, 9, 1636.
39. M. N. Kozicki, C. Gopalan, M. Balakrishnan, M. Mitkova, IEEE Trans. Nanotechnol. 2006, 5, 535.
40. H. X. Guo, B. Yang, L. Chen, Y. D. Xia, K. B. Yin, Z. G. Liu, J. Yin, Appl. Phys. Lett 2007, 91, 243513.
41. N. F. Mott, R. W. Gurny, in Electronic Processes in Ionic Crystals, Oxford University Press, Oxford 1948.
42. J. J. O'wyer, in The Theory of Electrical Conduction and Breakdown in Solid Dielectrics, Oxford, Clarendon, 1973.
43. I. Valov, R. Waser, J. R. Jameson, M. N. Kozicki, Nanotechnol. 2011, 22, 254003.
44. M. Wuttig, N. Yamada, Nature Mater. 2007, 6, 824.
45. G. W. Burr, M. J. Breitwisch, M. Franceschini, D. Garetto, K. Gopalakrishnan, B. Jackson, B. Kurdi, C. Lam, L. A. Lastras, A. Padilla, B. Rajendran, S. Raoux, R. S. Shenoy, J. Vac. Sci. Technol. B 2010, 28, 223.
46. T. Tsuruoka, K. Terabe, T. Hasegawa, M. Aono, Nanotechnol. 2010, 21, 425205.
47. T. Tsuruoka, K. Terabe, T. Hasegawa, M. Aono, Nanotechnol. 2011, 22, 254013.
48. N. Banno, T. Sakamoto, N. Iguchi, H. Sunamura, K. Terabe, T. Hasegawa, M. Aono, IEEE Trans. Electron Devices 2008, 55 (11), 3283.
49. K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, Y. Sugiyama, in Tech. Dig. of the IEEE Int. Electron Device Meet., 2007, pp. 767-770.
50. M. N. Kozicki, M. Park, M. Mitkova, IEEE Trans. Nanotechnol. 2005, 4, 331.
51. N. Banno, T. Sakamoto, S. Fujieda, M. Aono, in Proc. of the Int. Reliabil. Phys. Symp., Phoenix, 2008, pp. 707-708.
52. Ch. Liang, K. Terabe, T. Tsuruoka, M. Osada, T. Hasegawa, M. Aono, Adv. Func. Mater. 2007, 17, 1466.
53. Ch. Liang, K. Terabe, T. Hasegawa, M. Aono, Nanotechnol. 2007, 18, 485202.
54. K. Szot, W. Speier, G. Bihlmayer, R. Waser, Nature Mater. 2006, 5, 312.
55. S. Wu, T. Tsuruoka, K. Terabe, T. Hasegawa, J. P. Hill, K. Ariga, M. Aono, Adv. Funct. Mater. 2011, 21, 93.
56. S. Kaeriyama, T. Sakamoto, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama, M. Aono, IEEE J. Solid-State Circuits 2005, 40 (1), 168.
57. M. Tada, T. Sakamoto, Y. Tsuji, N. Banno, Y. Saito, Y. Yabe, S. Ishida, M. Terai, S. Kotsuji, N. Iguchi, M. Aono, H. Hada, N. Kasai, in Tech. Dig. of the IEEE Int. Electron Devices Meet., 2009, pp. 943-946.
58. F.-Q. Xie, L. Nittler, C. Obermair, T. Schimmel, Phys. Rev. Lett. 2004, 93, 128303.
59. F.-Q. Xie, R. Maul, C. Obermair, W. Wenzel, G. Schon, T. Schimmel, Adv. Mater. 2010, 22, 2033.
60. N. Banno, T. Sakamoto, N. Iguchi, H. Kawaura, S. Kaeriyama, M. Mizuno, K. Terabe, T. Hasegawa, M. Aono, IEICE Transactions on Electronics, 2006, E89-C 11, 1492.
61. T. Sakamoto, N. Iguchi, M. Aono, Appl. Phys. Lett. 2010, 96, 252104.
62. T. Hasegawa, Y. Itoh, H. Tanaka, T. Hino, T. Tsuruoka, K. Terabe, H. Miyazaki, K. Tsukagoshi, T. Ogawa, S. Yamaguchi, M. Aono, APEX, 2011, 4, 015204.
63. T. Gu, T. Tada, S. Watanabe, ACS Nano 2010, 4 (11), 6477.
64. T. Hino, H. Tanaka, T. Hasegawa, M. Aono, T. Ogawa, Small 2010, 6, 1745.
65. L. O. Chua, IEEE Trans. Circuit Theory, 1971, CT-18, 507.
66. D. B. Strukov, G. S. Snider, D. R. Stewart, R. S. Williams, Nature 2008, 453, 80.
67. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, R. S. Williams, Nat. Nanotechnol. 2008, 3, 429.
68. J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, R. S. Williams, Nature 2010, 464, 873.
69. M. Versace, B. Chandler, IEEE Spectrum 2010, MoNETA: A Mind made from Memristors.
70. T. Hasegawa, A. Nayak, T. Ohno, K. Terabe, T. Tsuruoka, J. K. Gimzewski, M. Aono, Appl. Phys. A 2011, 102, 811.
71. T. V. P. Bliss, G. L. Collingridge, Nature 1993, 361, 31.
72. S. J. Martin, P. D. Grimwood, R. G. M. Morris, Annu. Rev. Neurosci. 2000, 23, 649.
73. J. R. Whitlock, A. J. Heynen, M. G. Shuler, M. F. Bear, Science 2006, 313, 1093.
74. T. Ohno, T. Hasegawa, T. Tsuruoka, K. Terabe, J. K. Gimzewski, M. Aono, Nat. Mater. 2011, 10, 591.
75. H. van Houten, C. Beenakker, Phys. Today 1996, 49, 22.
76. R. C. Atkinson, R. M. Shiffrin, in The psychology of learning and motivation: Advances in research and theory, Vol. 2 (Eds:, K. W. Spence, J. T. Spence,), Academic Press, New York, 1968, pp. 89-195.
77. T. Hasegawa, T. Ohno, K. Terabe, T. Tsuruoka, T. Nakayama, J. K. Gimzewski, M. Aono, Adv. Mater. 2010, 22 (16), 1831.
78. D. Hammerstrom, in Nanotechnology: Information Technology II (Ed., R. Waser,), Wiley-VCH, Weinheim, 2008, pp. 251-285.
79. G. S. Snider, Nanotechnology 2007, 18, 365202.
80. O. Turel, K. Likharev, Int. J. Circ. Theor. Appl. 2003, 31, 37.
81. X. B. Yan, K. Li, J. Yin, Y. D. Xia, H. X. Guo, L. Chen, Z. G. Liu, Electrochem. Solid-State Lett. 2010, 13, H87.
82. S. Z. Rahaman, S. Maikap, H. C. Chiu, C.-H. Lin, T.-Y. Wu, Y.-S. Chen, P.-J. Tzeng, F. Chen, M.-J. Kao, M.-J. Tsai, Electrochem. Solid-State Lett. 2010, 13, H159.
83. Y. T. Li, S. B. Long, M. H. Zhang, Q. Liu, L. Shao, S. Zhang, Y. Wang, Q. Zuo, S. Liu, M. Liu, IEEE Electron Device Lett. 2010, 31, 117.
84. D. Cha, S. Lee, J. Jung, I. An, D.-W. Kim, J. Korean Phys. Soc. 2010, 56, 846.
85. Y. C. Yang, F. Pan, F. Zeng, New J. Phys. 2010, 12, 023008.
86. R. Pandian, B. J. Kooi, J. L. M. Oosthoek, P. van den Dool, G. Palasantzas, A. Pauza, Appl. Phys. Lett. 2009, 95, 252109.
87. L. Tang, P. Zhou, Y. R. Chen, L. Y. Chen, H. V. Lv, T. A. Tang, Y. Y. Lin, J. Korean Phys. Soc. 2008, 53 (4), 2283.
88. Y. Tsuji, T. Sakamoto, N. Banno, H. Hada, M. Aono, Appl. Phys. Lett. 2010, 96, 2010.