Comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte- based ReRAM

Advanced Materials

Volumn 25, Issue 2, 2013, Pages 162-164

  Valov, Ilia ^a,b   Waser, Rainer ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

electronic devices; nonvolatile memory; ReRAM; solid electrolytes

Indexed keywords

BIPOLAR ELECTRODES; CONDUCTIVE FILAMENTS; ELECTROCHEMICAL METALLIZATION (ECM); ELECTRONIC DEVICE; FILAMENT FORMATION; METAL CATION; NON-VOLATILE MEMORIES; ON DYNAMICS; REAL-TIME OBSERVATION; RERAM; SOLID MATERIAL; VALENCE CHANGE;

PLATINUM; SOLID ELECTROLYTES;

POSITIVE IONS;

ELECTROLYTE; OXIDE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR;

ELECTROLYTES; OXIDES; SEMICONDUCTORS;

EID: 84872118523     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201202592     Document Type: Article

References (24)

1. R. Waser, M. Aono, Nat. Mater. 2007, 6, 833.
2. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 2009, 21, 2632.
3. K. Tsunoda, Y. Fukuzumi, J. R. Jameson, Z. Wang, P. B. Griffin, Y. Nishi, Appl. Phys. Lett. 2007, 90, 113501.
4. W. Guan, M. Liu, S. Long, Q. Liu, W. Wang, Appl. Phys. Lett. 2008, 93, 223506.
5. D. S. Jeong, H. Schroeder, R. Waser, Electrochem. Solid-State Lett. 2007, 10, G51.
6. M. Wu, W. Jang, C. Lin, T. Tseng, Semicond. Sci. Technol. 2012, 27, 065010.
7. S.-Y. Wang, D.-Y. Lee, T.-Y. Tseng, C.-Y. Lin, Appl. Phys. Lett. 2009, 95, 112904.
8. J. R. Jameson, N. Gilbert, F. Koushan, J. Saenz, J. Wang, S. Hollmer, M. N. Kozicki, Appl. Phys. Lett. 2011, 99, 063506.
9. U. Russo, D. Kamalanathan, D. Ielmini, A. L. Lacaita, M. N. Kozicki, IEEE Trans. Electron Devices 2009, 56, 1040.
10. S. Yu, H.-S. Wong, IEEE Trans. Electron Devices 2011, 58, 1352.
11. T. Ohno, T. Hasegawa, T. Tsuruoka, K. Terabe, J. K. Gimzewski, M. Aono, Nat. Mater. 2011, 10, 591.
12. E. Linn, R. Rosezin, C. Kügeler, R. Waser, Nat. Mater. 2010, 9, 403.
13. D. B. Strukov, G. S. Snider, D. R. Stewart, R. S. Williams, Nature 2008, 453, 80.
14. I. Valov, I. Sapezanskaia, A. Nayak, T. Tsuruoka, T. Bredow, T. Hasegawa, G. Staikov, M. Aono, R. Waser, Nat. Mater. 2012, 11, 530.
15. M. Morales-Masis, S. J. van der Molen, T. Hasegawa, J. M. van Ruitenbeek, Phys. Rev. B 2011, 84, 115310.
16. A. Nayak, T. Tamura, T. Tsuruoka, K. Terabe, S. Hosaka, T. Hasegawa, M. Aono, J. Phys. Chem. Lett. 2010, 1, 604.
17. A. Nayak, T. Tsuruoka, K. Terabe, T. Hasegawa, M. Aono, Nanotechnology 2011, 22, 235201.
18. Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, W. Lu, Nat. Commun. 2012, 3, 732.
19. Q. Liu, J. Sun, H. Lv, S. Long, K. Yin, N. Wan, Y. Li, L. Sun, M. Liu, Adv. Mater. 2012, 24, 1844.
20. T. Hasegawa, K. Terabe, T. Tsuruoka, M. Aono, Adv. Mater. 2012, 24, 252.
21. I. Valov, R. Waser, J. R. Jameson, M. N. Kozicki, Nanotechnology 2011, 22, 254003.
22. M. H. Hebb, J. Chem. Phys. 1952, 20, 185.
23. M. Fleischmann, J. Ghoroghchian, D. Rolison, S. Pons, J. Phys. Chem. 1986, 90, 6392.
24. K. Peppler, C. Reitz, J. Janek, Appl. Phys. Lett. 2008, 93, 074104.